Inventor
YATSUDA KOICHI
JP20 patents
⚠️ This page may combine multiple inventors who share the name “YATSUDA KOICHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TOKYO ELECTRON LTD
14 patentsUS6156151ADec 5, 2000
Plasma processing apparatus
TOKYO ELECTRON LTD498 citations99
US7871908B2Jan 18, 2011
Method of manufacturing semiconductor device
TOKYO ELECTRON LTD11 citations84
US10325780B2Jun 18, 2019
Method of manufacturing semiconductor device
TOKYO ELECTRON LTD2 citations73
US6488863B2Dec 3, 2002
Plasma etching method
TOKYO ELECTRON LTD8 citations69
US11557661B2Jan 17, 2023
Method for manufacturing semiconductor device
TOKYO ELECTRON LTD1 citations62
US11171050B2Nov 9, 2021
Method for manufacturing a contact pad, method for manufacturing a semiconductor device using same, and semiconductor device
TOKYO ELECTRON LTD1 citations62
US11056349B2Jul 6, 2021
Method of fabricating semiconductor device, vacuum processing apparatus and substrate processing apparatus
TOKYO ELECTRON LTD0 citations62
US11004684B2May 11, 2021
Forming method of hard mask
TOKYO ELECTRON LTD0 citations62
US10593556B2Mar 17, 2020
Method of fabricating semiconductor device, vacuum processing apparatus and substrate processing apparatus
TOKYO ELECTRON LTD1 citations62
US11495490B2Nov 8, 2022
Semiconductor device manufacturing method
TOKYO ELECTRON LTD0 citations59
US10910259B2Feb 2, 2021
Semiconductor device manufacturing method
TOKYO ELECTRON LTD0 citations59
US11120999B2Sep 14, 2021
Plasma etching method
TOKYO ELECTRON LTD0 citations58
US10840359B2Nov 17, 2020
Method of forming FinFET source/drain contact
TOKYO ELECTRON LTD0 citations51
US10224202B2Mar 5, 2019
Forming method of hard mask, forming apparatus of hard mask and recording medium
TOKYO ELECTRON LTD0 citations51
YATSUDA KOICHI
3 patentsUS8641916B2Feb 4, 2014
Plasma etching apparatus, plasma etching method and storage medium
YATSUDA KOICHI67 citations96
US8685267B2Apr 1, 2014
Substrate processing method
YATSUDA KOICHI43 citations92
US8198183B2Jun 12, 2012
Forming method of etching mask, control program and program storage medium
YATSUDA KOICHI1 citations51