Inventor

MIN CHUNG-CHIANG

TW37 patents

⚠️ This page may combine multiple inventors who share the name “MIN CHUNG-CHIANG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

MIN CHUNG-CHIANG

TAIWAN SEMICONDUCTOR MFG CO LTD

Self-aligned split gate flash memory

Semiconductor structure and method of manufacturing the same

Capacitor structure and method of manufacturing the same

Sidewall spacer structure for memory cell

Trench formation scheme for programmable metallization cell to prevent metal redeposit

Sidewall spacer structure for memory cell

Method of forming memory cell

Semiconductor structure and method of manufacturing the same

Flash memory structure

Non-volatile memory device and manufacturing technology

Method of forming memory cell

Etch stop layer for memory device formation

Trench formation scheme for programmable metallization cell to prevent metal redeposit

Sidewall spacer structure for memory cell

Etch stop layer for memory device formation

Memory device with flat-top bottom electrodes and methods for forming the same

Trench formation scheme for programmable metallization cell to prevent metal redeposit

Semiconductor structure and method of manufacturing the same

Method of forming memory cell

Non-volatile memory device and manufacturing technology

Memory device with flat-top bottom electrodes and methods for forming the same

Etch stop layer for memory device formation

Semiconductor structure and method of manufacturing the same

Buffer layer in memory cell to prevent metal redeposition

Buffer layer in memory cell to prevent metal redeposition

Method of manufacturing capacitor structure

Flash memory structure

Method for forming flash memory structure

Method to control the common drain of a pair of control gates and to improve inter-layer dielectric (ILD) filling between the control gates

Method for forming flash memory structure

Method for forming semiconductor device structure

Discrete storage element formation for thin-film storage device

Semiconductor device structure and method for forming the same

Method to control the common drain of a pair of control gates and to improve inter-layer dielectric (ILD) filling between the control gates

Flash memory structure and method of forming the same

MIN CHUNG-CHIANG

Method for forming a deep trench

TAIWAN SEMICONDUCTOR MFG

Method of fabricating MONOS semiconductor device