Inventor
HARADA YOSHINAO
KR17 patents
⚠️ This page may combine multiple inventors who share the name “HARADA YOSHINAO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD
5 patentsUS6642131B2Nov 4, 2003
Method of forming a silicon-containing metal-oxide gate dielectric by depositing a high dielectric constant film on a silicon substrate and diffusing silicon from the substrate into the high dielectric constant film
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD130 citations98
US7157780B2Jan 2, 2007
Semiconductor device and method for producing the same
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD21 citations92
US6800512B1Oct 5, 2004
Method of forming insulating film and method of fabricating semiconductor device
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD26 citations92
US6273959B1Aug 14, 2001
Method of cleaning semiconductor device
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD15 citations82
US7033874B2Apr 25, 2006
Method of forming insulating film and method of fabricating semiconductor device including plasma bias for forming a second insulating film
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD6 citations74
IBM
5 patentsUS5970602AOct 26, 1999
Head actuator assembly and method for fabricating the same
IBM28 citations90
US5734521AMar 31, 1998
Moisture-absorbent element for disk drives
IBM39 citations89
US6292323B1Sep 18, 2001
Method and apparatus for removing accumulated particles on a head in an information recording and reproducing apparatus
IBM9 citations73
US6000121ADec 14, 1999
Method for manufacturing an enclosed disk drive
IBM8 citations71
US5650890AJul 22, 1997
Apparatus for controlling humidity in a disk drive enclosure
IBM13 citations71
PANASONIC CORP
3 patentsUS8937368B2Jan 20, 2015
Semiconductor device
PANASONIC CORP6 citations73
US7554156B2Jun 30, 2009
Semiconductor device having a field effect transistor using a high dielectric constant gate insulating film and manufacturing method of the same
PANASONIC CORP2 citations63
US7956413B2Jun 7, 2011
Semiconductor device having a field effect transistor using a high dielectric constant gate insulating film and manufacturing method of the same
PANASONIC CORP1 citations52
SAMSUNG ELECTRONICS CO LTD
3 patentsUS10840244B2Nov 17, 2020
Semiconductor device
SAMSUNG ELECTRONICS CO LTD3 citations72
US12507483B2Dec 23, 2025
Semiconductor device and method for manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations52
US9577076B2Feb 21, 2017
Methods of manufacturing semiconductor devices
SAMSUNG ELECTRONICS CO LTD0 citations52