Inventor
HIGASHIWAKI MASATAKA
JP13 patents
⚠️ This page may combine multiple inventors who share the name “HIGASHIWAKI MASATAKA”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAMURA SEISAKUSHO KK
9 patentsUS10249767B2Apr 2, 2019
Ga2O3-based semiconductor element
TAMURA SEISAKUSHO KK9 citations83
US10861945B2Dec 8, 2020
Semiconductor element and crystalline laminate structure
TAMURA SEISAKUSHO KK2 citations72
US10230007B2Mar 12, 2019
Semiconductor element, method for manufacturing same, semiconductor substrate, and crystal laminate structure
TAMURA SEISAKUSHO KK4 citations72
US9245749B2Jan 26, 2016
Method of forming Ga2O3-based crystal film and crystal multilayer structure
TAMURA SEISAKUSHO KK5 citations72
US11081598B2Aug 3, 2021
Trench MOS Schottky diode
TAMURA SEISAKUSHO KK1 citations62
US10199512B2Feb 5, 2019
High voltage withstand Ga2O3-based single crystal schottky barrier diode
TAMURA SEISAKUSHO KK1 citations62
US11264241B2Mar 1, 2022
Semiconductor substrate, semiconductor element and method for producing semiconductor substrate
TAMURA SEISAKUSHO KK0 citations60
US10825935B2Nov 3, 2020
Trench MOS-type Schottky diode
TAMURA SEISAKUSHO KK0 citations51
US9611567B2Apr 4, 2017
Method for controlling donor concentration in Ga2O3-based and method for forming ohmic contact
TAMURA SEISAKUSHO KK0 citations51