Inventor
CHAN CHIA-LING
TW26 patents
Patents
26 patentsUS9129988B1Sep 8, 2015
FinFET and method of manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD17 citations92
US10522656B2Dec 31, 2019
Forming epitaxial structures in fin field effect transistors
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations83
US10727226B2Jul 28, 2020
Semiconductor structure and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10665697B2May 26, 2020
Semiconductor device and method
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US9343575B1May 17, 2016
FinFET and method of manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10134902B2Nov 20, 2018
PMOS FinFET
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations72
US12538567B2Jan 27, 2026
Semiconductor structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12513948B2Dec 30, 2025
Forming epitaxial structures in fin field effect transistors
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12317524B2May 27, 2025
Semiconductor device and method
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11677028B2Jun 13, 2023
PMOS FinFET
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11610885B2Mar 21, 2023
Method for forming semiconductor structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11495674B2Nov 8, 2022
Forming epitaxial structures in fin field effect transistors
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11456373B2Sep 27, 2022
Semiconductor device and method
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11264505B2Mar 1, 2022
FinFET device and method of forming same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11018259B2May 25, 2021
Semiconductor device comprising gate structure and doped gate spacer
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10879399B2Dec 29, 2020
Method of manufacturing semiconductor device comprising doped gate spacer
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US10784377B2Sep 22, 2020
FinFET device and method of forming same
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US12125908B2Oct 22, 2024
Semiconductor device and method
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11342454B2May 24, 2022
Semiconductor device and method
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US10326003B2Jun 18, 2019
FinFET device and methods of forming
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10714619B2Jul 14, 2020
PMOS FinFET
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10700197B2Jun 30, 2020
Semiconductor device and method
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10629494B2Apr 21, 2020
Semiconductor device and method
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10861935B2Dec 8, 2020
Semiconductor device source/drain region with arsenic-containing barrier region
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations50
US10374038B2Aug 6, 2019
Semiconductor device source/drain region with arsenic-containing barrier region
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations50
US10566242B2Feb 18, 2020
Minimization of plasma doping induced fin height loss
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations42