P

Inventor

TYAGI SUNIT

IN24 patents
⚠️ This page may combine multiple inventors who share the name “TYAGI SUNIT”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

INTEL CORP

17 patents
US6372583B1Apr 16, 2002

Process for making semiconductor device with epitaxially grown source and drain

INTEL CORP573 citations99
US7335959B2Feb 26, 2008

Device with stepped source/drain region profile

INTEL CORP92 citations97
US6384457B2May 7, 2002

Asymmetric MOSFET devices

INTEL CORP43 citations95
US7312485B2Dec 25, 2007

CMOS fabrication process utilizing special transistor orientation

INTEL CORP21 citations92
US7019326B2Mar 28, 2006

Transistor with strain-inducing structure in channel

INTEL CORP35 citations92
US6787440B2Sep 7, 2004

Method for making a semiconductor device having an ultra-thin high-k gate dielectric

INTEL CORP41 citations92
US6249025B1Jun 19, 2001

Using epitaxially grown wells for reducing junction capacitances

INTEL CORP18 citations92
US6297104B1Oct 2, 2001

Methods to produce asymmetric MOSFET devices

INTEL CORP23 citations91
US5844300ADec 1, 1998

Single poly devices for monitoring the level and polarity of process induced charging in a MOS process

INTEL CORP48 citations91
US7422950B2Sep 9, 2008

Strained silicon MOS device with box layer between the source and drain regions

INTEL CORP10 citations81
US7581154B2Aug 25, 2009

Method and apparatus to lower operating voltages for memory arrays using error correcting codes

INTEL CORP8 citations80
US6200879B1Mar 13, 2001

Using epitaxially grown wells for reducing junction capacitances

INTEL CORP13 citations74
US7888710B2Feb 15, 2011

CMOS fabrication process utilizing special transistor orientation

INTEL CORP3 citations63
US7560780B2Jul 14, 2009

Active region spacer for semiconductor devices and method to form the same

INTEL CORP4 citations63
US6177705B1Jan 23, 2001

High power PMOS device

INTEL CORP3 citations61
US7473591B2Jan 6, 2009

Transistor with strain-inducing structure in channel

INTEL CORP0 citations51
US6458667B1Oct 1, 2002

High power PMOS device

INTEL CORP1 citations51

IGRENENERGI INC

4 patents

TYAGI SUNIT

3 patents