Inventor

TOGO MITSUHIRO

JP28 patents

⚠️ This page may combine multiple inventors who share the name “TOGO MITSUHIRO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TOGO MITSUHIRO

SANDISK TECHNOLOGIES LLC

High voltage field effect transistor with vertical current paths and method of making the same

Field effect transistors with gate fins and method of making the same

Field effect transistors with gate fins and method of making the same

Transistors with stepped contact via structures and methods of forming the same

High voltage field effect transistors with self-aligned silicide contacts and methods for making the same

Gate material-based capacitor and resistor structures and methods of forming the same

Field effect transistors with gate fins and method of making the same

High voltage field effect transistor with vertical current paths and method of making the same

Gate material-based capacitor and resistor structures and methods of forming the same

Field effect transistor with contact via structures that are laterally spaced by a sub-lithographic distance and method of making the same

GLOBALFOUNDRIES INC

Integrated circuits with replacement metal gates and methods for fabricating the same

Threshold voltage control for mixed-type non-planar semiconductor devices

Threshold voltage control for mixed-type non-planar semiconductor devices

Semiconductor structure(s) with extended source/drain channel interfaces and methods of fabrication

Temperature-controlled implanting of a diffusion-suppressing dopant in a semiconductor structure

Stress modulation in field effect transistors in reducing contact resistance and increasing charge carrier mobility

Methods, apparatus and system for threshold voltage control in FinFET devices

NEC CORP

Highly reliable trench capacitor type memory cell

Method of producing a semiconductor device with reduced fringe capacitance and short channel effect

Field-effect transistor with a trench isolation structure and a method for manufacturing the same

Semiconductor device with reduced fringe capacitance and short channel effect

Semiconductor device including a MIS transistor

Highly reliable trench capacitor type memory cell

Method for manufacturing surface channel type P-channel MOS transistor while suppressing P-type impurity penetration

NEC ELECTRONICS CORP

Semiconductor device n-channel type MOS transistor with gate electrode layer featuring small average polycrystalline silicon grain size

MOS Devices with different gate lengths and different gate polysilicon grain sizes

IMEC

Method for providing a gate metal layer of a transistor device and associated transistor

SONY COMPUTER ENTERTAINMENT INC

Storage medium storing display control program, entertainment apparatus, and display control program