Inventor
ZANETTI EDOARDO
IT13 patents
Patents
13 patentsUS11798981B2Oct 24, 2023
4H—SiC electronic device with improved short-circuit performances, and manufacturing method thereof
ST MICROELECTRONICS SRL2 citations72
US11018008B2May 25, 2021
Manufacturing method of a semiconductor device with efficient edge structure
ST MICROELECTRONICS SRL1 citations71
US12342582B2Jun 24, 2025
4H-SiC electronic device with improved short-circuit performances, and manufacturing method thereof
ST MICROELECTRONICS SRL0 citations62
US8344449B2Jan 1, 2013
Manufacturing process of a power electronic device integrated in a semiconductor substrate with wide band gap and electronic device thus obtained
ST MICROELECTRONICS SRL2 citations62
US12308235B2May 20, 2025
Manufacturing method of a semiconductor device with efficient edge structure
ST MICROELECTRONICS SRL0 citations61
US12148824B2Nov 19, 2024
MOSFET device with shielding region and manufacturing method thereof
ST MICROELECTRONICS SRL0 citations61
US11854809B2Dec 26, 2023
Manufacturing method of a semiconductor device with efficient edge structure
ST MICROELECTRONICS SRL0 citations61
US11545362B2Jan 3, 2023
Manufacturing method of a semiconductor device with efficient edge structure
ST MICROELECTRONICS SRL0 citations61
US11251296B2Feb 15, 2022
MOSFET device with shielding region and manufacturing method thereof
ST MICROELECTRONICS SRL1 citations61
US11329131B2May 10, 2022
4H-SiC MOSFET device and manufacturing method thereof
ST MICROELECTRONICS SRL0 citations51
US8580640B2Nov 12, 2013
Manufacturing process of a power electronic device integrated in a semiconductor substrate with wide band gap and electronic device thus obtained
ST MICROELECTRONICS SRL0 citations51
US12550397B2Feb 10, 2026
Silicon carbide vertical conduction MOSFET device and manufacturing process thereof
ST MICROELECTRONICS SRL0 citations47
US12255233B2Mar 18, 2025
Silicon carbide vertical conduction MOSFET device for power applications and manufacturing process thereof
ST MICROELECTRONICS SRL0 citations47