Inventor

RANGAN SANJAY

US21 patents

⚠️ This page may combine multiple inventors who share the name “RANGAN SANJAY”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

RANGAN SANJAY

INTEL CORP

Electrode configurations to increase electro-thermal isolation of phase-change memory elements and associated techniques

Electrode configurations to increase electro-thermal isolation of phase-change memory elements and associated techniques

Threshold voltage expansion

Multi-level cell (MLC) cross-point memory

Tailoring current magnitude and duration during a programming pulse for a memory device

Multi-level cell (MLC) techniques and circuits for cross-point memory

Multistage set procedure for phase change memory

Multistage set procedure for phase change memory

Non volatile cross point memory having word line pass transistor with multiple active states

Set technique for phase change memory

Tailoring current magnitude and duration during a programming pulse for a memory device

Set technique for phase change memory

Techniques for a multi-step current profile for a phase change memory

Techniques for a multi-step current profile for a phase change memory

Methods for generating random data using phase change materials and related devices and systems

Multistage set procedure for phase change memory

Multistage set procedure for phase change memory

MICRON TECHNOLOGY INC

Modified write voltage for memory devices

Modified write voltage for memory devices

SARPATWARI KARTHIK

Methods for generating random data using phase change materials and related devices and systems

RAO VALLURI R

Random read/write performance of probe storage memory devices