P

Inventor

PANGAL KIRAN

US84 patents
⚠️ This page may combine multiple inventors who share the name “PANGAL KIRAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

INTEL CORP

42 patents
US9250990B2Feb 2, 2016

Use of error correction pointers to handle errors in memory

INTEL CORP63 citations98
US9652321B2May 16, 2017

Recovery algorithm in non-volatile memory

INTEL CORP30 citations94
US9857992B2Jan 2, 2018

Dynamic window to improve NAND endurance

INTEL CORP34 citations93
US6949801B2Sep 27, 2005

Dual trench isolation using single critical lithographic patterning

INTEL CORP16 citations92
US9824767B1Nov 21, 2017

Methods and apparatus to reduce threshold voltage drift

INTEL CORP25 citations91
US9613691B2Apr 4, 2017

Apparatus and method for drift cancellation in a memory

INTEL CORP20 citations91
US8832530B2Sep 9, 2014

Techniques associated with a read and write window budget for a two level memory system

INTEL CORP31 citations87
US10324793B2Jun 18, 2019

Reduced uncorrectable memory errors

INTEL CORP4 citations84
US9685204B2Jun 20, 2017

Cross-point memory single-selection write technique

INTEL CORP5 citations84
US9601193B1Mar 21, 2017

Cross point memory control

INTEL CORP12 citations84
US9478286B1Oct 25, 2016

Transient current-protected threshold switching devices systems and methods

INTEL CORP5 citations84
US9384831B2Jul 5, 2016

Cross-point memory single-selection write technique

INTEL CORP8 citations84
US9202547B2Dec 1, 2015

Managing disturbance induced errors

INTEL CORP8 citations84
US9136873B2Sep 15, 2015

Reduced uncorrectable memory errors

INTEL CORP8 citations84
US6849518B2Feb 1, 2005

Dual trench isolation using single critical lithographic patterning

INTEL CORP15 citations84
US10032508B1Jul 24, 2018

Method and apparatus for multi-level setback read for three dimensional crosspoint memory

INTEL CORP9 citations83
US9208022B2Dec 8, 2015

Techniques for adaptive moving read references for memory cell read error recovery

INTEL CORP7 citations83
US9589634B1Mar 7, 2017

Techniques to mitigate bias drift for a memory device

INTEL CORP6 citations82
US9437293B1Sep 6, 2016

Integrated setback read with reduced snapback disturb

INTEL CORP18 citations81
US9384801B2Jul 5, 2016

Threshold voltage expansion

INTEL CORP8 citations81
US9368205B2Jun 14, 2016

Set and reset operation in phase change memory and associated techniques and configurations

INTEL CORP6 citations81
US9286975B2Mar 15, 2016

Mitigating read disturb in a cross-point memory

INTEL CORP18 citations80
US11107523B1Aug 31, 2021

Multi-level cell (MLC) cross-point memory

INTEL CORP3 citations73
US10475508B2Nov 12, 2019

Transient current-protected threshold switching devices systems and methods

INTEL CORP1 citations73
US10331345B2Jun 25, 2019

Method and apparatus for reducing silent data errors in non-volatile memory systems

INTEL CORP4 citations73
US10073731B2Sep 11, 2018

Error correction in memory

INTEL CORP3 citations73
US10056136B2Aug 21, 2018

Cross-point memory single-selection write technique

INTEL CORP3 citations73
US9934088B2Apr 3, 2018

Reduced uncorrectable memory errors

INTEL CORP2 citations73
US9852789B2Dec 26, 2017

Transient current-protected threshold switching devices systems and methods

INTEL CORP3 citations73
US9792986B2Oct 17, 2017

Phase change memory current

INTEL CORP4 citations73
US9792963B2Oct 17, 2017

Managing disturbance induced errors

INTEL CORP2 citations73
US9698830B2Jul 4, 2017

Single-bit first error correction

INTEL CORP4 citations73
US9619324B2Apr 11, 2017

Error correction in non—volatile memory

INTEL CORP6 citations73
US9543005B2Jan 10, 2017

Multistage memory cell read

INTEL CORP3 citations73
US9257175B2Feb 9, 2016

Refresh of data stored in a cross-point non-volatile memory

INTEL CORP3 citations73
US9231202B2Jan 5, 2016

Thermal-disturb mitigation in dual-deck cross-point memories

INTEL CORP5 citations73
US8959407B2Feb 17, 2015

Scaling factors for hard decision reads of codewords distributed across die

INTEL CORP5 citations73
US10957387B1Mar 23, 2021

Multi-level cell (MLC) techniques and circuits for cross-point memory

INTEL CORP2 citations72
US9892785B2Feb 13, 2018

Multistage set procedure for phase change memory

INTEL CORP2 citations72
US9685213B2Jun 20, 2017

Provision of holding current in non-volatile random access memory

INTEL CORP2 citations72
US9583187B2Feb 28, 2017

Multistage set procedure for phase change memory

INTEL CORP2 citations72
US9543004B1Jan 10, 2017

Provision of holding current in non-volatile random access memory

INTEL CORP2 citations72

GUO XIN

2 patents

MICRON TECHNOLOGY INC

2 patents

UNIV PRINCETON

1 patent

GULIANI SANDEEP

1 patent

PANGAL KIRAN

1 patent

WAKCHAURE YOGESH B

1 patent

Showing the top 50 of 84 patents by PatentIndex Score.