Inventor
PANGAL KIRAN
US84 patents
⚠️ This page may combine multiple inventors who share the name “PANGAL KIRAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
INTEL CORP
42 patentsUS9250990B2Feb 2, 2016
Use of error correction pointers to handle errors in memory
INTEL CORP63 citations98
US9652321B2May 16, 2017
Recovery algorithm in non-volatile memory
INTEL CORP30 citations94
US9857992B2Jan 2, 2018
Dynamic window to improve NAND endurance
INTEL CORP34 citations93
US6949801B2Sep 27, 2005
Dual trench isolation using single critical lithographic patterning
INTEL CORP16 citations92
US9824767B1Nov 21, 2017
Methods and apparatus to reduce threshold voltage drift
INTEL CORP25 citations91
US9613691B2Apr 4, 2017
Apparatus and method for drift cancellation in a memory
INTEL CORP20 citations91
US8832530B2Sep 9, 2014
Techniques associated with a read and write window budget for a two level memory system
INTEL CORP31 citations87
US10324793B2Jun 18, 2019
Reduced uncorrectable memory errors
INTEL CORP4 citations84
US9685204B2Jun 20, 2017
Cross-point memory single-selection write technique
INTEL CORP5 citations84
US9601193B1Mar 21, 2017
Cross point memory control
INTEL CORP12 citations84
US9478286B1Oct 25, 2016
Transient current-protected threshold switching devices systems and methods
INTEL CORP5 citations84
US9384831B2Jul 5, 2016
Cross-point memory single-selection write technique
INTEL CORP8 citations84
US9202547B2Dec 1, 2015
Managing disturbance induced errors
INTEL CORP8 citations84
US9136873B2Sep 15, 2015
Reduced uncorrectable memory errors
INTEL CORP8 citations84
US6849518B2Feb 1, 2005
Dual trench isolation using single critical lithographic patterning
INTEL CORP15 citations84
US10032508B1Jul 24, 2018
Method and apparatus for multi-level setback read for three dimensional crosspoint memory
INTEL CORP9 citations83
US9208022B2Dec 8, 2015
Techniques for adaptive moving read references for memory cell read error recovery
INTEL CORP7 citations83
US9589634B1Mar 7, 2017
Techniques to mitigate bias drift for a memory device
INTEL CORP6 citations82
US9437293B1Sep 6, 2016
Integrated setback read with reduced snapback disturb
INTEL CORP18 citations81
US9384801B2Jul 5, 2016
Threshold voltage expansion
INTEL CORP8 citations81
US9368205B2Jun 14, 2016
Set and reset operation in phase change memory and associated techniques and configurations
INTEL CORP6 citations81
US9286975B2Mar 15, 2016
Mitigating read disturb in a cross-point memory
INTEL CORP18 citations80
US11107523B1Aug 31, 2021
Multi-level cell (MLC) cross-point memory
INTEL CORP3 citations73
US10475508B2Nov 12, 2019
Transient current-protected threshold switching devices systems and methods
INTEL CORP1 citations73
US10331345B2Jun 25, 2019
Method and apparatus for reducing silent data errors in non-volatile memory systems
INTEL CORP4 citations73
US10073731B2Sep 11, 2018
Error correction in memory
INTEL CORP3 citations73
US10056136B2Aug 21, 2018
Cross-point memory single-selection write technique
INTEL CORP3 citations73
US9934088B2Apr 3, 2018
Reduced uncorrectable memory errors
INTEL CORP2 citations73
US9852789B2Dec 26, 2017
Transient current-protected threshold switching devices systems and methods
INTEL CORP3 citations73
US9792986B2Oct 17, 2017
Phase change memory current
INTEL CORP4 citations73
US9792963B2Oct 17, 2017
Managing disturbance induced errors
INTEL CORP2 citations73
US9698830B2Jul 4, 2017
Single-bit first error correction
INTEL CORP4 citations73
US9619324B2Apr 11, 2017
Error correction in non—volatile memory
INTEL CORP6 citations73
US9543005B2Jan 10, 2017
Multistage memory cell read
INTEL CORP3 citations73
US9257175B2Feb 9, 2016
Refresh of data stored in a cross-point non-volatile memory
INTEL CORP3 citations73
US9231202B2Jan 5, 2016
Thermal-disturb mitigation in dual-deck cross-point memories
INTEL CORP5 citations73
US8959407B2Feb 17, 2015
Scaling factors for hard decision reads of codewords distributed across die
INTEL CORP5 citations73
US10957387B1Mar 23, 2021
Multi-level cell (MLC) techniques and circuits for cross-point memory
INTEL CORP2 citations72
US9892785B2Feb 13, 2018
Multistage set procedure for phase change memory
INTEL CORP2 citations72
US9685213B2Jun 20, 2017
Provision of holding current in non-volatile random access memory
INTEL CORP2 citations72
US9583187B2Feb 28, 2017
Multistage set procedure for phase change memory
INTEL CORP2 citations72
US9543004B1Jan 10, 2017
Provision of holding current in non-volatile random access memory
INTEL CORP2 citations72
GUO XIN
2 patentsMICRON TECHNOLOGY INC
2 patentsUNIV PRINCETON
1 patentGULIANI SANDEEP
1 patentPANGAL KIRAN
1 patentWAKCHAURE YOGESH B
1 patentShowing the top 50 of 84 patents by PatentIndex Score.