Inventor
MOON CHANG-WOOK
KR22 patents
⚠️ This page may combine multiple inventors who share the name “MOON CHANG-WOOK”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
17 patentsUS7417271B2Aug 26, 2008
Electrode structure having at least two oxide layers and non-volatile memory device having the same
SAMSUNG ELECTRONICS CO LTD97 citations97
US6333630B1Dec 25, 2001
Magnetic field generating apparatus for magnetic resonance imaging system
SAMSUNG ELECTRONICS CO LTD47 citations89
US9318573B2Apr 19, 2016
Field effect transistor having germanium nanorod and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD15 citations82
US6835919B2Dec 28, 2004
Inductively coupled plasma system
SAMSUNG ELECTRONICS CO LTD12 citations69
US7095036B2Aug 22, 2006
Electron beam lithography apparatus using a patterned emitter and method of fabricating the patterned emitter
SAMSUNG ELECTRONICS CO LTD2 citations63
US6870173B2Mar 22, 2005
Electron-beam focusing apparatus and electron-beam projection lithography system employing the same
SAMSUNG ELECTRONICS CO LTD4 citations63
US6784438B2Aug 31, 2004
Electron projection lithography apparatus using secondary electrons
SAMSUNG ELECTRONICS CO LTD3 citations63
US6953946B2Oct 11, 2005
Emitter for electron-beam projection lithography system and manufacturing method thereof
SAMSUNG ELECTRONICS CO LTD2 citations62
US6815681B2Nov 9, 2004
Electron beam lithography apparatus using a patterned emitter
SAMSUNG ELECTRONICS CO LTD3 citations62
US7189981B2Mar 13, 2007
Electromagnetic focusing method for electron-beam lithography system
SAMSUNG ELECTRONICS CO LTD3 citations57
US7256406B2Aug 14, 2007
Emitter for electron-beam projection lithography system, and method of manufacturing and operating the emitter
SAMSUNG ELECTRONICS CO LTD0 citations52
US7863142B2Jan 4, 2011
Method of forming a germanium silicide layer, semiconductor device including the germanium silicide layer, and method of manufacturing the semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations51
US7859035B2Dec 28, 2010
Storage node having a metal-insulator-metal structure, non-volatile memory device including a storage node having a metal-insulator-metal structure and method of operating the same
SAMSUNG ELECTRONICS CO LTD0 citations51
US7667481B2Feb 23, 2010
Surface electron emission device array and thin film transistor inspection system using the same
SAMSUNG ELECTRONICS CO LTD0 citations51
US7091054B2Aug 15, 2006
Manufacturing method for emitter for electron-beam projection lithography
SAMSUNG ELECTRONICS CO LTD0 citations51
US7646003B2Jan 12, 2010
Focusing apparatus and lithography system using the same
SAMSUNG ELECTRONICS CO LTD0 citations50
US7884410B2Feb 8, 2011
Nonvolatile memory devices and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD1 citations49