Inventor
HIGUCHI TOSHIHIKO
JP24 patents
⚠️ This page may combine multiple inventors who share the name “HIGUCHI TOSHIHIKO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
ASAHI GLASS CO LTD
11 patentsUS5068304ANov 26, 1991
Moisture-curable resin composition
ASAHI GLASS CO LTD119 citations96
US5223583AJun 29, 1993
Process for producing polyalkylene oxide derivatives
ASAHI GLASS CO LTD78 citations95
US5811566ASep 22, 1998
Process for purifying a polyether
ASAHI GLASS CO LTD50 citations94
US7439279B2Oct 21, 2008
Active energy ray curable coating composition and molded product having coating film made of cured product of said composition
ASAHI GLASS CO LTD21 citations92
US5976684ANov 2, 1999
Organic substrate provided with a light absorptive antireflection film and process for its production
ASAHI GLASS CO LTD19 citations92
US5786070AJul 28, 1998
Cross-linked polyurethane resin sheet and laminated product employing it
ASAHI GLASS CO LTD49 citations92
US6383641B1May 7, 2002
Transparent coated molded product and method for producing the same
ASAHI GLASS CO LTD34 citations91
US5973096AOct 26, 1999
Process for purifying a polyether
ASAHI GLASS CO LTD20 citations91
US5124425AJun 23, 1992
Curable polyurethane composition excellent in flexibility
ASAHI GLASS CO LTD22 citations87
US7727626B2Jun 1, 2010
Light diffusion plate and its production process
ASAHI GLASS CO LTD7 citations71
US7361393B2Apr 22, 2008
Optical disk having a hard coat layer having lubricity imparted
ASAHI GLASS CO LTD0 citations42
SEIKO EPSON CORP
9 patentsUS5466971ANov 14, 1995
Semiconductor device having a multilayer interconnection layer
SEIKO EPSON CORP48 citations92
US5093710AMar 3, 1992
Semiconductor device having a layer of titanium nitride on the side walls of contact holes and method of fabricating same
SEIKO EPSON CORP32 citations92
US7825027B2Nov 2, 2010
Method for manufacturing memory device
SEIKO EPSON CORP12 citations84
US6740559B2May 25, 2004
Semiconductor device comprising MIS field-effect transistor, and method of fabricating the same
SEIKO EPSON CORP8 citations74
US6344677B2Feb 5, 2002
Semiconductor device comprising MIS field-effect transistor, and method of fabricating the same
SEIKO EPSON CORP8 citations74
US7109540B2Sep 19, 2006
Semiconductor device for restraining short circuiting and method of manufacturing thereof
SEIKO EPSON CORP4 citations63
US6724092B2Apr 20, 2004
Semiconductor device having a wiring pattern and method for manufacturing the same
SEIKO EPSON CORP6 citations63
US5281544AJan 25, 1994
Method of manufacturing planar type polar transistors and combination bipolar/MIS type transistors
SEIKO EPSON CORP6 citations63
US5404043AApr 4, 1995
Semiconductor devices of the planar type bipolar transistors and combination bipolar/MIS type transistors
SEIKO EPSON CORP0 citations42
HIGUCHI TOSHIHIKO
4 patentsUS8303754B2Nov 6, 2012
Glass substrate with protective glass, process for producing display device using glass substrate with protective glass, and silicone for release paper
HIGUCHI TOSHIHIKO12 citations83
US8652643B2Feb 18, 2014
Thin plate glass laminate and process for producing display device using thin plate glass laminate
HIGUCHI TOSHIHIKO4 citations72
US8157945B2Apr 17, 2012
Thin plate glass laminate, process for producing display device using thin plate glass laminate, and support glass substrate
HIGUCHI TOSHIHIKO6 citations72
US8425711B2Apr 23, 2013
Glass substrate with protective glass, and process for producing display device using glass substrate with protective glass
HIGUCHI TOSHIHIKO3 citations61