Inventor
IKUTA TERUHISA
JP17 patents
⚠️ This page may combine multiple inventors who share the name “IKUTA TERUHISA”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD
7 patentsUS6989566B2Jan 24, 2006
High-voltage semiconductor device including a floating block
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD43 citations92
US6750506B2Jun 15, 2004
High-voltage semiconductor device
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD27 citations92
US7408234B2Aug 5, 2008
Semiconductor device and method for manufacturing the same
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD7 citations73
US7238987B2Jul 3, 2007
Lateral semiconductor device and method for producing the same
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD8 citations73
US7323747B2Jan 29, 2008
Lateral semiconductor device
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD6 citations61
US7157772B2Jan 2, 2007
Semiconductor device and method of fabricating the same
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD1 citations51
US7342283B2Mar 11, 2008
Semiconductor device
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD0 citations40
PANASONIC CORP
4 patentsUS7719086B2May 18, 2010
Lateral insulated gate bipolar transistor having a retrograde doping profile in base region and method of manufacture thereof
PANASONIC CORP10 citations83
US7944022B2May 17, 2011
Lateral insulated gate bipolar transistor having a retrograde doping profile in base region and method of manufacture thereof
PANASONIC CORP4 citations73
US7973361B2Jul 5, 2011
High breakdown voltage semiconductor device and fabrication method of the same
PANASONIC CORP1 citations51
US7485972B2Feb 3, 2009
Semiconductor device
PANASONIC CORP0 citations40
IKUTA TERUHISA
3 patentsUS8304858B2Nov 6, 2012
Lateral insulated gate bipolar transistor having a retrograde doping profile in base region and method of manufacture thereof
IKUTA TERUHISA0 citations49
US8093131B2Jan 10, 2012
Lateral insulated gate bipolar transistor having a retrograde doping profile in base region and method of manufacture thereof
IKUTA TERUHISA0 citations49
US8823106B2Sep 2, 2014
ESD protective element and plasma display including the ESD protective element
IKUTA TERUHISA0 citations35