Inventor
AOYAMA SHINTARO
JP21 patents
⚠️ This page may combine multiple inventors who share the name “AOYAMA SHINTARO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TOKYO ELECTRON LTD
15 patentsUS6467491B1Oct 22, 2002
Processing apparatus and processing method
TOKYO ELECTRON LTD97 citations96
US7129185B2Oct 31, 2006
Substrate processing method and a computer readable storage medium storing a program for controlling same
TOKYO ELECTRON LTD36 citations92
US6927112B2Aug 9, 2005
Radical processing of a sub-nanometer insulation film
TOKYO ELECTRON LTD27 citations92
US6617207B1Sep 9, 2003
Method and system for forming a stacked gate insulating film
TOKYO ELECTRON LTD21 citations90
US7754293B2Jul 13, 2010
Film forming method
TOKYO ELECTRON LTD9 citations83
US6866890B2Mar 15, 2005
Method of forming a dielectric film
TOKYO ELECTRON LTD18 citations83
US7125799B2Oct 24, 2006
Method and device for processing substrate, and apparatus for manufacturing semiconductor device
TOKYO ELECTRON LTD8 citations73
US7867920B2Jan 11, 2011
Method for modifying high-k dielectric thin film and semiconductor device
TOKYO ELECTRON LTD2 citations63
US7105101B2Sep 12, 2006
Method of removing oxide film on a substrate with hydrogen and fluorine radicals
TOKYO ELECTRON LTD2 citations63
US10886170B2Jan 5, 2021
Method of forming tungsten film
TOKYO ELECTRON LTD0 citations62
US7497964B2Mar 3, 2009
Plasma igniting method and substrate processing method
TOKYO ELECTRON LTD4 citations62
US7378358B2May 27, 2008
Method for forming insulating film on substrate, method for manufacturing semiconductor device and substrate-processing apparatus
TOKYO ELECTRON LTD3 citations62
US10612139B2Apr 7, 2020
Method of forming a tungsten film having a low resistance
TOKYO ELECTRON LTD0 citations51
US9418837B2Aug 16, 2016
Semiconductor device manufacturing method and substrate treatment system
TOKYO ELECTRON LTD0 citations49
US7858509B2Dec 28, 2010
High-dielectric film substrate processing method
TOKYO ELECTRON LTD0 citations46
TEXAS INSTRUMENTS INC
3 patentsUS6730613B1May 4, 2004
Method for reducing by-product deposition in wafer processing equipment
TEXAS INSTRUMENTS INC17 citations83
US6194292B1Feb 27, 2001
Method of fabricating in-situ doped rough polycrystalline silicon using a single wafer reactor
TEXAS INSTRUMENTS INC5 citations60
US6794308B2Sep 21, 2004
Method for reducing by-product deposition in wafer processing equipment
TEXAS INSTRUMENTS INC0 citations41