Inventor
CHOI MYUNG CHAN
US15 patents
⚠️ This page may combine multiple inventors who share the name “CHOI MYUNG CHAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
ZMOS TECHNOLOGY INC
7 patentsUS7082048B2Jul 25, 2006
Low voltage operation DRAM control circuits
ZMOS TECHNOLOGY INC13 citations91
US7929367B2Apr 19, 2011
Low power memory control circuits and methods
ZMOS TECHNOLOGY INC30 citations90
US7301322B2Nov 27, 2007
CMOS constant voltage generator
ZMOS TECHNOLOGY INC15 citations83
US7522464B2Apr 21, 2009
Dynamic memory refresh configurations and leakage control methods
ZMOS TECHNOLOGY INC14 citations82
US7705625B2Apr 27, 2010
Source transistor configurations and control methods
ZMOS TECHNOLOGY INC14 citations80
US7839701B2Nov 23, 2010
Low voltage operation DRAM control circuits
ZMOS TECHNOLOGY INC2 citations61
US7324390B2Jan 29, 2008
Low voltage operation dram control circuits
ZMOS TECHNOLOGY INC1 citations61
WINBOND ELECTRONICS CORP
4 patentsUS10564692B2Feb 18, 2020
Memory device and power reduction method of the same memory device
WINBOND ELECTRONICS CORP2 citations72
US9721675B1Aug 1, 2017
Memory device having input circuit and operating method of same
WINBOND ELECTRONICS CORP5 citations72
US11004499B1May 11, 2021
Latency control circuit and method
WINBOND ELECTRONICS CORP5 citations70
US10217497B2Feb 26, 2019
Delay locked loop circuit and method of controlling same
WINBOND ELECTRONICS CORP1 citations62
SAMSUNG ELECTRONICS CO LTD
3 patentsUS5923612AJul 13, 1999
Synchronous semiconductor memory device having macro command storage and execution method therefor
SAMSUNG ELECTRONICS CO LTD22 citations92
US5583815ADec 10, 1996
Mode setting curcuit and method of a semiconductor memory device
SAMSUNG ELECTRONICS CO LTD4 citations62
US5748639AMay 5, 1998
Multi-bit test circuits for integrated circuit memory devices and related methods
SAMSUNG ELECTRONICS CO LTD0 citations41