P

Inventor

LIAN JINGYU

US27 patents
⚠️ This page may combine multiple inventors who share the name “LIAN JINGYU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

INFINEON TECHNOLOGIES AG

17 patents
US7586158B2Sep 8, 2009

Piezoelectric stress liner for bulk and SOI

INFINEON TECHNOLOGIES AG21 citations88
US6432725B1Aug 13, 2002

Methods for crystallizing metallic oxide dielectric films at low temperature

INFINEON TECHNOLOGIES AG17 citations83
US7800182B2Sep 21, 2010

Semiconductor devices having pFET with SiGe gate electrode and embedded SiGe source/drain regions and methods of making the same

INFINEON TECHNOLOGIES AG6 citations73
US6794705B2Sep 21, 2004

Multi-layer Pt electrode for DRAM and FRAM with high K dielectric materials

INFINEON TECHNOLOGIES AG10 citations73
US6596580B2Jul 22, 2003

Recess Pt structure for high k stacked capacitor in DRAM and FRAM, and the method to form this structure

INFINEON TECHNOLOGIES AG12 citations73
US8349528B2Jan 8, 2013

Semiconductor devices and methods of manufacturing thereof

INFINEON TECHNOLOGIES AG2 citations62
US7794903B2Sep 14, 2010

Metrology systems and methods for lithography processes

INFINEON TECHNOLOGIES AG1 citations62
US7674350B2Mar 9, 2010

Feature dimension control in a manufacturing process

INFINEON TECHNOLOGIES AG2 citations62
US7319270B2Jan 15, 2008

Multi-layer electrode and method of forming the same

INFINEON TECHNOLOGIES AG4 citations62
US6839220B1Jan 4, 2005

Multi-layer barrier allowing recovery anneal for ferroelectric capacitors

INFINEON TECHNOLOGIES AG2 citations62
US7745292B2Jun 29, 2010

Method for fabricating a semiconductor gate structure

INFINEON TECHNOLOGIES AG3 citations61
US6897501B2May 24, 2005

Avoiding shorting in capacitors

INFINEON TECHNOLOGIES AG4 citations61
US8007985B2Aug 30, 2011

Semiconductor devices and methods of manufacturing thereof

INFINEON TECHNOLOGIES AG0 citations52
US7842579B2Nov 30, 2010

Method for manufacturing a semiconductor device having doped and undoped polysilicon layers

INFINEON TECHNOLOGIES AG0 citations51
US7378700B2May 27, 2008

Self-aligned V0-contact for cell size reduction

INFINEON TECHNOLOGIES AG1 citations51
US7061035B2Jun 13, 2006

Self-aligned V0-contact for cell size reduction

INFINEON TECHNOLOGIES AG1 citations51
US6984555B2Jan 10, 2006

Device and method for inhibiting oxidation of contact plugs in ferroelectric capacitor devices

INFINEON TECHNOLOGIES AG0 citations51

IBM

2 patents

TOSHIBA KK

2 patents

ZHUANG HAOREN

2 patents

HAN JIN-PING

2 patents

SARMA CHANDRASEKHAR

2 patents