Inventor
LIAN JINGYU
US27 patents
⚠️ This page may combine multiple inventors who share the name “LIAN JINGYU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
INFINEON TECHNOLOGIES AG
17 patentsUS7586158B2Sep 8, 2009
Piezoelectric stress liner for bulk and SOI
INFINEON TECHNOLOGIES AG21 citations88
US6432725B1Aug 13, 2002
Methods for crystallizing metallic oxide dielectric films at low temperature
INFINEON TECHNOLOGIES AG17 citations83
US7800182B2Sep 21, 2010
Semiconductor devices having pFET with SiGe gate electrode and embedded SiGe source/drain regions and methods of making the same
INFINEON TECHNOLOGIES AG6 citations73
US6794705B2Sep 21, 2004
Multi-layer Pt electrode for DRAM and FRAM with high K dielectric materials
INFINEON TECHNOLOGIES AG10 citations73
US6596580B2Jul 22, 2003
Recess Pt structure for high k stacked capacitor in DRAM and FRAM, and the method to form this structure
INFINEON TECHNOLOGIES AG12 citations73
US8349528B2Jan 8, 2013
Semiconductor devices and methods of manufacturing thereof
INFINEON TECHNOLOGIES AG2 citations62
US7794903B2Sep 14, 2010
Metrology systems and methods for lithography processes
INFINEON TECHNOLOGIES AG1 citations62
US7674350B2Mar 9, 2010
Feature dimension control in a manufacturing process
INFINEON TECHNOLOGIES AG2 citations62
US7319270B2Jan 15, 2008
Multi-layer electrode and method of forming the same
INFINEON TECHNOLOGIES AG4 citations62
US6839220B1Jan 4, 2005
Multi-layer barrier allowing recovery anneal for ferroelectric capacitors
INFINEON TECHNOLOGIES AG2 citations62
US7745292B2Jun 29, 2010
Method for fabricating a semiconductor gate structure
INFINEON TECHNOLOGIES AG3 citations61
US6897501B2May 24, 2005
Avoiding shorting in capacitors
INFINEON TECHNOLOGIES AG4 citations61
US8007985B2Aug 30, 2011
Semiconductor devices and methods of manufacturing thereof
INFINEON TECHNOLOGIES AG0 citations52
US7842579B2Nov 30, 2010
Method for manufacturing a semiconductor device having doped and undoped polysilicon layers
INFINEON TECHNOLOGIES AG0 citations51
US7378700B2May 27, 2008
Self-aligned V0-contact for cell size reduction
INFINEON TECHNOLOGIES AG1 citations51
US7061035B2Jun 13, 2006
Self-aligned V0-contact for cell size reduction
INFINEON TECHNOLOGIES AG1 citations51
US6984555B2Jan 10, 2006
Device and method for inhibiting oxidation of contact plugs in ferroelectric capacitor devices
INFINEON TECHNOLOGIES AG0 citations51
IBM
2 patentsTOSHIBA KK
2 patentsUS7042705B2May 9, 2006
Sidewall structure and method of fabrication for reducing oxygen diffusion to contact plugs during CW hole reactive ion etch processing
TOSHIBA KK3 citations62
US7001780B2Feb 21, 2006
Method of fabrication of an FeRAM capacitor and an FeRAM capacitor formed by the method
TOSHIBA KK0 citations51