Inventor
LASKA THOMAS
DE11 patents
⚠️ This page may combine multiple inventors who share the name “LASKA THOMAS”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
INFINEON TECHNOLOGIES AG
7 patentsUS6147403ANov 14, 2000
Semiconductor body with metallizing on the back side
INFINEON TECHNOLOGIES AG21 citations86
US7709938B2May 4, 2010
Arrangement for electrically connecting semiconductor circuit arrangements to an external contact device and method for producing the same
INFINEON TECHNOLOGIES AG7 citations72
US7005761B2Feb 28, 2006
Circuit configuration for off-load switching, switch mode power supply, clocked supply, voltage regulator, lamp switch, and methods for operating the circuit configuration
INFINEON TECHNOLOGIES AG6 citations62
US7851913B2Dec 14, 2010
Semiconductor device including a power device with first metal layer and second metal layer laterally spaced apart
INFINEON TECHNOLOGIES AG6 citations61
US10777506B2Sep 15, 2020
Silicon carbide semiconductor device having a metal adhesion and barrier structure and a method of forming such a semiconductor device
INFINEON TECHNOLOGIES AG0 citations51
US10475743B2Nov 12, 2019
Semiconductor device having a metal adhesion and barrier structure and a method of forming such a semiconductor device
INFINEON TECHNOLOGIES AG0 citations51
US8030744B2Oct 4, 2011
Arrangement for electrically connecting semiconductor circuit arrangements to an external contact device and method for producing the same
INFINEON TECHNOLOGIES AG0 citations50
SIEMENS AG
3 patentsUS6309920B1Oct 30, 2001
Bipolar transistor which can be controlled by field effect and method for producing the same
SIEMENS AG103 citations96
US5726474AMar 10, 1998
Field effect controlled semiconductor component with integrated resistance therein
SIEMENS AG26 citations91
US6309965B1Oct 30, 2001
Method of producing a semiconductor body with metallization on the back side that includes a titanium nitride layer to reduce warping
SIEMENS AG25 citations86