P

Inventor

MIYATAKE SHINICHI

JP50 patents
⚠️ This page may combine multiple inventors who share the name “MIYATAKE SHINICHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

HITACHI LTD

20 patents
US5818784AOct 6, 1998

Semiconductor memory device and memory system

HITACHI LTD33 citations96
US6201728B1Mar 13, 2001

Dynamic RAM, semiconductor storage device, and semiconductor integrated circuit device

HITACHI LTD60 citations95
US6882557B2Apr 19, 2005

Semiconductor memory device

HITACHI LTD20 citations93
US6064605AMay 16, 2000

Semiconductor memory device and memory system

HITACHI LTD23 citations92
US5905685AMay 18, 1999

Dynamic memory

HITACHI LTD48 citations92
US5335203AAug 2, 1994

Semiconductor integrated circuit device with internal voltage drop circuits

HITACHI LTD41 citations92
US6411543B2Jun 25, 2002

Dynamic random access memory (RAM), semiconductor storage device, and semiconductor integrated circuit (IC) device

HITACHI LTD43 citations91
US5970003AOct 19, 1999

Semiconductor memory device

HITACHI LTD59 citations91
US5963467AOct 5, 1999

Semiconductor memory device

HITACHI LTD41 citations91
US7876627B2Jan 25, 2011

Semiconductor memory device having a sense amplifier circuit with decreased offset

HITACHI LTD10 citations84
US6633508B2Oct 14, 2003

Semiconductor memory device and memory system

HITACHI LTD11 citations82
US7447091B2Nov 4, 2008

Sense amplifier for semiconductor memory device

HITACHI LTD5 citations74
US6538946B2Mar 25, 2003

Semiconductor integrated circuit device

HITACHI LTD12 citations74
US6282141B1Aug 28, 2001

Semiconductor memory device and memory system

HITACHI LTD4 citations73
US6178108B1Jan 23, 2001

Semiconductor memory device

HITACHI LTD10 citations72
US6198128B1Mar 6, 2001

Method of manufacturing a semiconductor device, and semiconductor device

HITACHI LTD13 citations71
US7995405B2Aug 9, 2011

Semiconductor memory device having a sense amplifier circuit with decreased offset

HITACHI LTD4 citations63
US7609572B2Oct 27, 2009

Semiconductor memory device

HITACHI LTD2 citations63
US6828612B2Dec 7, 2004

Semiconductor memory device

HITACHI LTD4 citations63
US5983358ANov 9, 1999

Semiconductor memory having redundancy circuit

HITACHI LTD3 citations59

MICRON TECHNOLOGY INC

16 patents
US10482931B1Nov 19, 2019

Reversed bias compensation for sense amplifier operation

MICRON TECHNOLOGY INC8 citations84
US9330794B1May 3, 2016

DRAM-based anti-fuse cells

MICRON TECHNOLOGY INC7 citations84
US11488655B2Nov 1, 2022

Subword drivers with reduced numbers of transistors and circuit layout of the same

MICRON TECHNOLOGY INC2 citations73
US10937476B2Mar 2, 2021

Apparatuses and methods for controlling word line discharge

MICRON TECHNOLOGY INC4 citations73
US10854272B1Dec 1, 2020

Apparatuses and methods for controlling word line discharge

MICRON TECHNOLOGY INC4 citations73
US10714153B2Jul 14, 2020

Reversed bias compensation for sense amplifier operation

MICRON TECHNOLOGY INC3 citations73
US10665311B2May 26, 2020

Apparatuses and methods including anti-fuses and for reading and programming of same

MICRON TECHNOLOGY INC2 citations73
US10276253B2Apr 30, 2019

Apparatuses and methods including anti-fuses and for reading and programming of same

MICRON TECHNOLOGY INC3 citations73
US11176977B2Nov 16, 2021

Apparatuses and methods for controlling word line discharge

MICRON TECHNOLOGY INC1 citations63
US11942142B2Mar 26, 2024

Memory subword driver circuits with common transistors at word lines

MICRON TECHNOLOGY INC0 citations62
US12469544B2Nov 11, 2025

Sense amplifier circuitry and threshold voltage compensation

MICRON TECHNOLOGY INC0 citations58
US10770462B2Sep 8, 2020

Circuit and layout for single gate type precharge circuit for data lines in memory device

MICRON TECHNOLOGY INC0 citations52
US10714158B2Jul 14, 2020

Two-step data-line precharge scheme

MICRON TECHNOLOGY INC0 citations52
US10236040B2Mar 19, 2019

Two-step data-line precharge scheme

MICRON TECHNOLOGY INC0 citations52
US10163906B2Dec 25, 2018

Circuit and layout for single gate type precharge circuit for data lines in memory device

MICRON TECHNOLOGY INC1 citations52
US11069384B2Jul 20, 2021

Apparatuses and methods for compensation of sense amplifiers

MICRON TECHNOLOGY INC0 citations50

ELPIDA MEMORY INC

5 patents

MIYATAKE SHINICHI

4 patents

HITACHI ULSI SYS CO LTD

2 patents

PS4 LUXCO SARL

2 patents

HIACHI LTD

1 patent