Inventor
SRIVASTAVA AMITESH
US2 patents
Patents
2 patentsUS9842898B2Dec 12, 2017
Methods of growing a silicon carbide epitaxial layer on a substrate to increase and control carrier lifetime
SUDARSHAN TANGALI S1 citations40
US8574528B2Nov 5, 2013
Methods of growing a silicon carbide epitaxial layer on a substrate to increase and control carrier lifetime
SUDARSHAN TANGALI S0 citations40