P

Inventor

ZHANG ZHENGYI

US34 patents
⚠️ This page may combine multiple inventors who share the name “ZHANG ZHENGYI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SANDISK TECHNOLOGIES LLC

16 patents
US10762973B1Sep 1, 2020

Suppressing program disturb during program recovery in memory device

SANDISK TECHNOLOGIES LLC25 citations94
US9959932B1May 1, 2018

Grouping memory cells into sub-blocks for program speed uniformity

SANDISK TECHNOLOGIES LLC24 citations94
US9922705B1Mar 20, 2018

Reducing select gate injection disturb at the beginning of an erase operation

SANDISK TECHNOLOGIES LLC23 citations94
US9887002B1Feb 6, 2018

Dummy word line bias ramp rate during programming

SANDISK TECHNOLOGIES LLC36 citations94
US9785493B1Oct 10, 2017

Data recovery method after word line-to-word line short circuit

SANDISK TECHNOLOGIES LLC22 citations94
US9786378B1Oct 10, 2017

Equalizing erase depth in different blocks of memory cells

SANDISK TECHNOLOGIES LLC28 citations91
US10424387B1Sep 24, 2019

Reducing widening of threshold voltage distributions in a memory device due to temperature change

SANDISK TECHNOLOGIES LLC15 citations86
US10706941B1Jul 7, 2020

Multi-state programming in memory device with loop-dependent bit line voltage during verify

SANDISK TECHNOLOGIES LLC6 citations84
US10446244B1Oct 15, 2019

Adjusting voltage on adjacent word line during verify of memory cells on selected word line in multi-pass programming

SANDISK TECHNOLOGIES LLC10 citations84
US10297330B2May 21, 2019

Separate drain-side dummy word lines within a block to reduce program disturb

SANDISK TECHNOLOGIES LLC12 citations84
US9984760B1May 29, 2018

Suppressing disturb of select gate transistors during erase in memory

SANDISK TECHNOLOGIES LLC11 citations84
US10748627B2Aug 18, 2020

Reducing neighbor word line interference in a two-tier memory device by modifying word line programming order

SANDISK TECHNOLOGIES LLC4 citations73
US10431313B2Oct 1, 2019

Grouping memory cells into sub-blocks for program speed uniformity

SANDISK TECHNOLOGIES LLC3 citations73
US10134479B2Nov 20, 2018

Non-volatile memory with reduced program speed variation

SANDISK TECHNOLOGIES LLC4 citations73
US10038005B1Jul 31, 2018

Sense circuit having bit line clamp transistors with different threshold voltages for selectively boosting current in NAND strings

SANDISK TECHNOLOGIES LLC5 citations73
US10854300B2Dec 1, 2020

Multi-state programming in memory device with loop-dependent bit line voltage during verify

SANDISK TECHNOLOGIES LLC1 citations62

MICRON TECHNOLOGY INC

7 patents

AUTOIMMUNE INC

4 patents

HUAWEI TECH CO LTD

4 patents

SANDISK TECHNOLOGIES INC

2 patents

UNIV TSINGHUA

1 patent