Inventor
LEE JI-SANG
KR45 patents
⚠️ This page may combine multiple inventors who share the name “LEE JI-SANG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
33 patentsUS10734078B2Aug 4, 2020
Non-volatile memory device and programming method thereof
SAMSUNG ELECTRONICS CO LTD11 citations94
US10559362B2Feb 11, 2020
Non-volatile memory device and a read method thereof
SAMSUNG ELECTRONICS CO LTD22 citations94
US10325658B2Jun 18, 2019
Non-volatile memory device and programming method thereof
SAMSUNG ELECTRONICS CO LTD15 citations94
US9378826B2Jun 28, 2016
Nonvolatile memory device, program method thereof, and storage device including the same
SAMSUNG ELECTRONICS CO LTD18 citations92
US11574683B2Feb 7, 2023
Non-volatile memory device and programming method thereof
SAMSUNG ELECTRONICS CO LTD4 citations86
US11127465B2Sep 21, 2021
Non-volatile memory device and programming method thereof
SAMSUNG ELECTRONICS CO LTD4 citations84
US10699788B2Jun 30, 2020
Non-volatile memory device and operating method thereof for performing an erase detect operation
SAMSUNG ELECTRONICS CO LTD7 citations84
US10304549B2May 28, 2019
Nonvolatile memory device that applies different recovery voltages to word lines in transition from verification operation to bit line setup operation and program method of the same
SAMSUNG ELECTRONICS CO LTD7 citations84
US10056152B2Aug 21, 2018
Methods of reading data in nonvolatile memory devices and nonvolatile memory devices
SAMSUNG ELECTRONICS CO LTD9 citations84
US9991007B2Jun 5, 2018
Nonvolatile memory device and a method of operating the same
SAMSUNG ELECTRONICS CO LTD15 citations84
US12198782B2Jan 14, 2025
Memory device, operation method of memory device, and page buffer included in memory device
SAMSUNG ELECTRONICS CO LTD2 citations73
US11830554B2Nov 28, 2023
Non-volatile memory device and programming method thereof
SAMSUNG ELECTRONICS CO LTD2 citations73
US11295818B2Apr 5, 2022
Non-volatile memory device, operating method thereof, and storage device having the same
SAMSUNG ELECTRONICS CO LTD2 citations73
US11183251B2Nov 23, 2021
Non-volatile memory device and a read method thereof
SAMSUNG ELECTRONICS CO LTD2 citations73
US11158381B2Oct 26, 2021
Non-volatile memory device and operating method thereof
SAMSUNG ELECTRONICS CO LTD2 citations73
US10916314B2Feb 9, 2021
Non-volatile memory device and a read method thereof
SAMSUNG ELECTRONICS CO LTD3 citations73
US10224109B2Mar 5, 2019
Memory device, memory system, method of operating memory device, and method of operating memory system
SAMSUNG ELECTRONICS CO LTD2 citations73
US9524782B2Dec 20, 2016
Nonvolatile memory device and method of writing data in nonvolatile memory device
SAMSUNG ELECTRONICS CO LTD4 citations73
US9007839B2Apr 14, 2015
Nonvolatile memory device performing read operation with variable read voltage
SAMSUNG ELECTRONICS CO LTD4 citations73
US8976599B2Mar 10, 2015
Method of programming nonvolatile memory device
SAMSUNG ELECTRONICS CO LTD4 citations73
US12198764B2Jan 14, 2025
Non-volatile memory device and programming method thereof
SAMSUNG ELECTRONICS CO LTD0 citations62
US12165721B2Dec 10, 2024
Nonvolatile memory device and operation method of detecting defective memory cells
SAMSUNG ELECTRONICS CO LTD0 citations62
US11854627B2Dec 26, 2023
Non-volatile memory device, operating method thereof, and storage device having the same
SAMSUNG ELECTRONICS CO LTD0 citations62
US11574692B2Feb 7, 2023
Nonvolatile memory device and operation method of detecting defective memory cells
SAMSUNG ELECTRONICS CO LTD0 citations62
US10957397B2Mar 23, 2021
Non-volatile memory device, storage device, and programming method thereof for performing an erase detect operation
SAMSUNG ELECTRONICS CO LTD1 citations62
US10910077B2Feb 2, 2021
Operation method of a nonvolatile memory device for controlling a resume operation
SAMSUNG ELECTRONICS CO LTD0 citations62
US10431315B2Oct 1, 2019
Operation method of a nonvolatile memory device for controlling a resume operation
SAMSUNG ELECTRONICS CO LTD1 citations62
US10210936B2Feb 19, 2019
Nonvolatile memory device and a method of reading the same
SAMSUNG ELECTRONICS CO LTD1 citations62
US9183924B2Nov 10, 2015
Methods of operating nonvolatile memory devices that support efficient error detection
SAMSUNG ELECTRONICS CO LTD2 citations62
US12230329B2Feb 18, 2025
Flash memory device and data recover read method thereof
SAMSUNG ELECTRONICS CO LTD0 citations60
US10102910B2Oct 16, 2018
Nonvolatile memory device with first and second precharge circuit
SAMSUNG ELECTRONICS CO LTD1 citations52
US9583197B2Feb 28, 2017
Nonvolatile memory device, program method thereof, and storage device including the same
SAMSUNG ELECTRONICS CO LTD0 citations52
US12073915B2Aug 27, 2024
Memory device, operation method of memory device, and page buffer included in memory device
SAMSUNG ELECTRONICS CO LTD0 citations50
LEE JI-SANG
10 patentsUS8675416B2Mar 18, 2014
Flash memory device and related program verification method
LEE JI-SANG23 citations92
US8661294B2Feb 25, 2014
Nonvolatile memory device and related program verification circuit
LEE JI-SANG21 citations92
US9508424B2Nov 29, 2016
Nonvolatile memory and programming method using third latch for verification read results
LEE JI-SANG15 citations84
US8811094B2Aug 19, 2014
Non-volatile multi-level memory device and data read method
LEE JI-SANG16 citations84
US8451663B2May 28, 2013
Method of programming nonvolatile memory device including first and second sense operations in program loop
LEE JI-SANG6 citations84
US8717822B2May 6, 2014
Non-volatile memory device and read method thereof
LEE JI-SANG6 citations83
US8694720B2Apr 8, 2014
Nonvolatile memory devices with page flags, methods of operation and memory systems including same
LEE JI-SANG16 citations83
US9842654B2Dec 12, 2017
Nonvolatile memory device with improved reliability and operating speed
LEE JI-SANG3 citations73
US9053822B2Jun 9, 2015
Methods of operating nonvolatile memory devices that support efficient error detection
LEE JI-SANG2 citations62
US8537621B2Sep 17, 2013
Non-volatile memory device and read method thereof
LEE JI-SANG3 citations62