Inventor

MELDRIM JOHN MARK

US48 patents

⚠️ This page may combine multiple inventors who share the name “MELDRIM JOHN MARK”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

MELDRIM JOHN MARK

MICRON TECHNOLOGY INC

Methods of filling horizontally-extending openings of integrated assemblies

Assemblies having vertically-stacked conductive structures

Integrated assemblies and methods of forming integrated assemblies

Source material for electronic device applications

Ohmic contacts for semiconductor structures

Methods of forming tungsten structures

Assemblies having conductive structures with three or more different materials

Assemblies having conductive structures with three or more different materials

Methods of filling horizontally-extending openings of integrated assemblies

Methods of filling openings with conductive material, and assemblies having vertically-stacked conductive structures

Method of forming a transistor gate of a recessed access device, method of forming a recessed transistor gate and a non-recessed transistor gate, and method of fabricating an integrated circuit

Silicided recessed silicon

Methods used in forming an array of elevationally-extending transistors

Gate stacks

Methods of forming tungsten structures

Ohmic contacts for semiconductor structures

Ohmic contacts for semiconductor structures

Conductive interconnects suitable for utilization in integrated assemblies, and methods of forming conductive interconnects

Conductive components and memory assemblies

Integrated circuitry, comprising a pair of opposing lateral projections in insulating material in a cavity

Memories having vertically stacked conductive filled structures

Assemblies which include wordlines having a first metal-containing material at least partially surrounding a second metal-containing material and having different crystallinity than the second metal-containing material

Methods used in forming integrated circuitry comprising a stack comprising vertically-alternating first tiers and second tiers with the stack comprising a cavity therein that comprises a stair-step structure

Assemblies which include wordlines having a first metal-containing material at least partially surrounding a second metal-containing material and having different crystallinity than the second metal-containing material

Methods used in forming an array of elevationally-extending transistors

Methods of forming integrated assemblies

Assemblies having vertically-extending structures, and methods of forming assemblies having vertically-extending channel material pillars

Conductive interconnects suitable for utilization in integrated assemblies, and methods of forming conductive interconnects

Conductive components and memory assemblies

Conductive structures, assemblies having vertically-stacked memory cells over conductive structures, and methods of forming conductive structures

Methods of filling openings with conductive material, and assemblies having vertically-stacked conductive structures

Source material for electronic device applications

Assemblies having vertically-extending structures, and methods of forming assemblies having vertically-extending channel material pillars

Assemblies having vertically-stacked conductive structures

Integrated assemblies and methods of forming integrated assemblies

Assemblies having vertically-extending structures

Methods of forming metal silicide-comprising material and methods of forming metal silicide-comprising contacts

Memory arrays comprising strings of memory cells and methods used in forming a memory array comprising strings of memory cells

Gate stacks

Methods used in forming an array of elevationally-extending transistors

Conductive components and memory assemblies

Conductive structures and assemblies having vertically-stacked memory cells over conductive structures

MELDRIM JOHN MARK

Source-channel interaction in 3D circuit

Methods of forming memory cells

WELLS DAVID H

Methods of forming metal silicide-comprising material and methods of forming metal silicide-comprising contacts

LODESTAR LICENSING GROUP LLC

Assemblies having conductive structures with three or more different materials

NEJAD HASAN

Silicided recessed silicon

INTEL CORP

Method and apparatus for improved etch stop layer or hard mask layer of a memory device