Inventor
ZHANG SHAOQIANG
TW29 patents
⚠️ This page may combine multiple inventors who share the name “ZHANG SHAOQIANG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
GLOBALFOUNDRIES SG PTE LTD
22 patentsUS9472512B1Oct 18, 2016
Integrated circuits with contacts through a buried oxide layer and methods of producing the same
GLOBALFOUNDRIES SG PTE LTD29 citations93
US9721969B2Aug 1, 2017
Creation of wide band gap material for integration to SOI thereof
GLOBALFOUNDRIES SG PTE LTD6 citations84
US9780207B2Oct 3, 2017
Self-aligned high voltage LDMOS
GLOBALFOUNDRIES SG PTE LTD2 citations73
US9087906B2Jul 21, 2015
Grounding of silicon-on-insulator structure
GLOBALFOUNDRIES SG PTE LTD6 citations73
US9899527B2Feb 20, 2018
Integrated circuits with gaps
GLOBALFOUNDRIES SG PTE LTD4 citations72
US9960115B1May 1, 2018
Heat dissipation and series resistance reduction of PA and RF switch in SLT by backside thick metal
GLOBALFOUNDRIES SG PTE LTD2 citations70
US10763250B2Sep 1, 2020
Silicon controlled rectifier (SCR) based ESD protection device
GLOBALFOUNDRIES SG PTE LTD1 citations62
US10192886B2Jan 29, 2019
Creation of wide band gap material for integration to SOI thereof
GLOBALFOUNDRIES SG PTE LTD1 citations62
US10680099B2Jun 9, 2020
Isolated laterally diffused metal oxide semiconductor (LDMOS) transistor having low drain to body capacitance
GLOBALFOUNDRIES SG PTE LTD1 citations61
US10529738B2Jan 7, 2020
Integrated circuits with selectively strained device regions and methods for fabricating same
GLOBALFOUNDRIES SG PTE LTD1 citations61
US11004972B2May 11, 2021
Semiconductor device having conducting member for electrically coupling gate structure to underlying substrate of SOI structure
GLOBALFOUNDRIES SG PTE LTD0 citations52
US10573639B2Feb 25, 2020
Silicon controlled rectifier (SCR) based ESD protection device
GLOBALFOUNDRIES SG PTE LTD0 citations52
US10062710B2Aug 28, 2018
Integrated circuits with deep and ultra shallow trench isolations and methods for fabricating the same
GLOBALFOUNDRIES SG PTE LTD0 citations51
US10020394B2Jul 10, 2018
Extended drain metal-oxide-semiconductor transistor
GLOBALFOUNDRIES SG PTE LTD1 citations51
US9922868B2Mar 20, 2018
Integrated circuits using silicon on insulator substrates and methods of manufacturing the same
GLOBALFOUNDRIES SG PTE LTD1 citations51
US9899514B2Feb 20, 2018
Extended drain metal-oxide-semiconductor transistor
GLOBALFOUNDRIES SG PTE LTD1 citations51
US9685364B2Jun 20, 2017
Silicon-on-insulator integrated circuit devices with body contact structures and methods for fabricating the same
GLOBALFOUNDRIES SG PTE LTD1 citations51
US9520506B2Dec 13, 2016
3D high voltage charge pump
GLOBALFOUNDRIES SG PTE LTD1 citations51
US9793185B2Oct 17, 2017
Test structure for monitoring liner oxidation
GLOBALFOUNDRIES SG PTE LTD0 citations50
US8946819B2Feb 3, 2015
Silicon-on-insulator integrated circuits with local oxidation of silicon and methods for fabricating the same
GLOBALFOUNDRIES SG PTE LTD1 citations48
US9230990B2Jan 5, 2016
Silicon-on-insulator integrated circuit devices with body contact structures
GLOBALFOUNDRIES SG PTE LTD0 citations42
US10193002B2Jan 29, 2019
MOS varactors and methods for fabricating MOS varactors
GLOBALFOUNDRIES SG PTE LTD0 citations38
CHARTERED SEMICONDUCTOR MFG
2 patentsUNIV DONGGUAN TECHNOLOGY
2 patentsUS10388914B2Aug 20, 2019
Preparation method for printing OLED display
UNIV DONGGUAN TECHNOLOGY2 citations68
US11448599B1Sep 20, 2022
Method for trapping molecule with optical fiber tweezers based on phase transition and crystallization and method for detecting raman spectrum of persistent organic pollutant
UNIV DONGGUAN TECHNOLOGY0 citations50