P

Inventor

ZHANG SHAOQIANG

TW29 patents
⚠️ This page may combine multiple inventors who share the name “ZHANG SHAOQIANG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

GLOBALFOUNDRIES SG PTE LTD

22 patents
US9472512B1Oct 18, 2016

Integrated circuits with contacts through a buried oxide layer and methods of producing the same

GLOBALFOUNDRIES SG PTE LTD29 citations93
US9721969B2Aug 1, 2017

Creation of wide band gap material for integration to SOI thereof

GLOBALFOUNDRIES SG PTE LTD6 citations84
US9780207B2Oct 3, 2017

Self-aligned high voltage LDMOS

GLOBALFOUNDRIES SG PTE LTD2 citations73
US9087906B2Jul 21, 2015

Grounding of silicon-on-insulator structure

GLOBALFOUNDRIES SG PTE LTD6 citations73
US9899527B2Feb 20, 2018

Integrated circuits with gaps

GLOBALFOUNDRIES SG PTE LTD4 citations72
US9960115B1May 1, 2018

Heat dissipation and series resistance reduction of PA and RF switch in SLT by backside thick metal

GLOBALFOUNDRIES SG PTE LTD2 citations70
US10763250B2Sep 1, 2020

Silicon controlled rectifier (SCR) based ESD protection device

GLOBALFOUNDRIES SG PTE LTD1 citations62
US10192886B2Jan 29, 2019

Creation of wide band gap material for integration to SOI thereof

GLOBALFOUNDRIES SG PTE LTD1 citations62
US10680099B2Jun 9, 2020

Isolated laterally diffused metal oxide semiconductor (LDMOS) transistor having low drain to body capacitance

GLOBALFOUNDRIES SG PTE LTD1 citations61
US10529738B2Jan 7, 2020

Integrated circuits with selectively strained device regions and methods for fabricating same

GLOBALFOUNDRIES SG PTE LTD1 citations61
US11004972B2May 11, 2021

Semiconductor device having conducting member for electrically coupling gate structure to underlying substrate of SOI structure

GLOBALFOUNDRIES SG PTE LTD0 citations52
US10573639B2Feb 25, 2020

Silicon controlled rectifier (SCR) based ESD protection device

GLOBALFOUNDRIES SG PTE LTD0 citations52
US10062710B2Aug 28, 2018

Integrated circuits with deep and ultra shallow trench isolations and methods for fabricating the same

GLOBALFOUNDRIES SG PTE LTD0 citations51
US10020394B2Jul 10, 2018

Extended drain metal-oxide-semiconductor transistor

GLOBALFOUNDRIES SG PTE LTD1 citations51
US9922868B2Mar 20, 2018

Integrated circuits using silicon on insulator substrates and methods of manufacturing the same

GLOBALFOUNDRIES SG PTE LTD1 citations51
US9899514B2Feb 20, 2018

Extended drain metal-oxide-semiconductor transistor

GLOBALFOUNDRIES SG PTE LTD1 citations51
US9685364B2Jun 20, 2017

Silicon-on-insulator integrated circuit devices with body contact structures and methods for fabricating the same

GLOBALFOUNDRIES SG PTE LTD1 citations51
US9520506B2Dec 13, 2016

3D high voltage charge pump

GLOBALFOUNDRIES SG PTE LTD1 citations51
US9793185B2Oct 17, 2017

Test structure for monitoring liner oxidation

GLOBALFOUNDRIES SG PTE LTD0 citations50
US8946819B2Feb 3, 2015

Silicon-on-insulator integrated circuits with local oxidation of silicon and methods for fabricating the same

GLOBALFOUNDRIES SG PTE LTD1 citations48
US9230990B2Jan 5, 2016

Silicon-on-insulator integrated circuit devices with body contact structures

GLOBALFOUNDRIES SG PTE LTD0 citations42
US10193002B2Jan 29, 2019

MOS varactors and methods for fabricating MOS varactors

GLOBALFOUNDRIES SG PTE LTD0 citations38

CHARTERED SEMICONDUCTOR MFG

2 patents

UNIV DONGGUAN TECHNOLOGY

2 patents

CHU SHAO-FU SANFORD

1 patent

TAIWAN SEMICONDUCTOR MFG CO LTD

1 patent

XIAO HAN

1 patent