P

Inventor

WASKIEWICZ CHRISTOPHER J

US52 patents

Patents

50 patents
US9666528B1May 30, 2017

BEOL vertical fuse formed over air gap

IBM430 citations99
US9449871B1Sep 20, 2016

Hybrid airgap structure with oxide liner

IBM21 citations92
US6294449B1Sep 25, 2001

Self-aligned contact for closely spaced transistors

IBM37 citations92
US10361129B1Jul 23, 2019

Self-aligned double patterning formed fincut

IBM14 citations86
US10770653B1Sep 8, 2020

Selective dielectric deposition to prevent gouging in MRAM

IBM7 citations84
US10483361B1Nov 19, 2019

Wrap-around-contact structure for top source/drain in vertical FETs

IBM11 citations84
US9780027B2Oct 3, 2017

Hybrid airgap structure with oxide liner

IBM13 citations84
US8987133B2Mar 24, 2015

Titanium oxynitride hard mask for lithographic patterning

IBM9 citations84
US11171051B1Nov 9, 2021

Contacts and liners having multi-segmented protective caps

IBM9 citations83
US8986921B2Mar 24, 2015

Lithographic material stack including a metal-compound hard mask

IBM11 citations81
US11495538B2Nov 8, 2022

Fully aligned via for interconnect

IBM3 citations73
US11476346B2Oct 18, 2022

Vertical transistor having an oxygen-blocking top spacer

IBM2 citations73
US11244861B2Feb 8, 2022

Method and structure for forming fully-aligned via

IBM2 citations73
US11239165B2Feb 1, 2022

Method of forming an interconnect structure with enhanced corner connection

IBM2 citations73
US11152265B2Oct 19, 2021

Local isolation of source/drain for reducing parasitic capacitance in vertical field effect transistors

IBM2 citations73
US10741652B2Aug 11, 2020

Wrap-around-contact structure for top source/drain in vertical FETs

IBM2 citations73
US6303275B1Oct 16, 2001

Method for resist filling and planarization of high aspect ratio features

IBM7 citations72
US12009422B2Jun 11, 2024

Self aligned top contact for vertical transistor

IBM0 citations63
US11901440B2Feb 13, 2024

Sacrificial fin for self-aligned contact rail formation

IBM0 citations63
US11876124B2Jan 16, 2024

Vertical transistor having an oxygen-blocking layer

IBM0 citations63
US11742246B2Aug 29, 2023

Local isolation of source/drain for reducing parasitic capacitance in vertical field effect transistors

IBM0 citations63
US11742354B2Aug 29, 2023

Top epitaxial layer and contact for VTFET

IBM0 citations63
US11646358B2May 9, 2023

Sacrificial fin for contact self-alignment

IBM0 citations63
US11316029B2Apr 26, 2022

Sacrificial fin for contact self-alignment

IBM0 citations63
US11211291B2Dec 28, 2021

Via formation with robust hardmask removal

IBM0 citations63
US10985025B2Apr 20, 2021

Fin cut profile using fin base liner

IBM0 citations63
US10892336B2Jan 12, 2021

Wrap-around-contact structure for top source/drain in vertical FETS

IBM0 citations63
US9087876B2Jul 21, 2015

Titanium oxynitride hard mask for lithographic patterning

IBM3 citations63
US12464809B2Nov 4, 2025

Vertical field effect transistor with minimal contact to gate erosion

IBM0 citations62
US12356711B2Jul 8, 2025

Late gate extension

IBM0 citations62
US12249643B2Mar 11, 2025

Stacked planar field effect transistors with 2D material channels

IBM0 citations62
US11908923B2Feb 20, 2024

Low-resistance top contact on VTFET

IBM0 citations62
US11742350B2Aug 29, 2023

Metal gate N/P boundary control by active gate cut and recess

IBM0 citations62
US11646373B2May 9, 2023

Vertical field effect transistor with bottom spacer

IBM0 citations62
US11217692B2Jan 4, 2022

Vertical field effect transistor with bottom spacer

IBM0 citations62
US11205723B2Dec 21, 2021

Selective source/drain recess for improved performance, isolation, and scaling

IBM1 citations62
US10833173B2Nov 10, 2020

Low-resistance top contact on VTFET

IBM1 citations62
US12243770B2Mar 4, 2025

Hard mask removal without damaging top epitaxial layer

IBM0 citations61
US10943992B2Mar 9, 2021

Transistor having straight bottom spacers

IBM0 citations60
US11263059B2Mar 1, 2022

Load leveler

IBM1 citations58
US11005646B2May 11, 2021

Blockchain stochastic timer transaction synchronization

IBM0 citations58
US12136656B2Nov 5, 2024

Semiconductor structure having two-dimensional channel

IBM0 citations52
US11916013B2Feb 27, 2024

Via interconnects including super vias

IBM0 citations52
US11351811B2Jun 7, 2022

Optically-passive magnetic signature and identification feature with electromagnetic tamper detection

IBM0 citations52
US10833172B2Nov 10, 2020

Gate stack reliability in vertical transport field effect transistors

IBM0 citations52
US10741452B2Aug 11, 2020

Controlling fin hardmask cut profile using a sacrificial epitaxial structure

IBM0 citations52
US10546813B2Jan 28, 2020

BEOL vertical fuse formed over air gap

IBM0 citations52
US10453793B2Oct 22, 2019

BEOL vertical fuse formed over air gap

IBM0 citations52
US10083908B2Sep 25, 2018

BEOL vertical fuse formed over air gap

IBM0 citations52
US9997454B2Jun 12, 2018

BEOL vertical fuse formed over air gap

IBM0 citations52

Showing the top 50 of 52 patents by PatentIndex Score.