Inventor

BAO JUNJING

US82 patents

⚠️ This page may combine multiple inventors who share the name “BAO JUNJING”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

BAO JUNJING

QUALCOMM INC

Self-aligned metal cut and via for back-end-of-line (BEOL) processes for semiconductor integrated circuit (IC) fabrication, and related processes and devices

Integrated circuit (IC) interconnect structure having a metal layer with asymmetric metal line-dielectric structures supporting self-aligned vertical interconnect accesses (VIAS)

Contact wrap around structure

Electrode structure for resistive memory device

Self-aligned structure

Integrated circuit devices and methods

Hybrid low resistance metal lines

Contact for semiconductor device

Method and apparatus for selectively forming nitride caps on metal gate

Vertically stacked nanowire field effect transistors

Integrated circuit devices and methods

Gate contact isolation in a semiconductor

Transistor with insulator

MIM capacitor containing negative capacitance material

Graphene as interlayer dielectric

Electrode structure for resistive memory device

Back-end-of-line (BEOL) high resistance (Hi-R) conductor layer in a metal oxide metal (MOM) capacitor

Semiconductor having a source/drain contact with a single inner spacer

Optimized contact structure

Back-end-of-line integrated metal-insulator-metal capacitor

Air gap underneath passive devices

Metal-oxide-metal capacitor from subtractive back-end-of-line scheme

Self-aligned source/drain contact structure and method of manufacturing the same

Semiconductor device with superlattice fin

IBM

Subtractive etch interconnects

High performance refractory metal / copper interconnects to eliminate electromigration

Selective local metal cap layer formation for improved electromigration behavior

Graphene sacrificial deposition layer on beol copper liner-seed for mitigating queue-time issues between liner and plating step

Graphene and metal interconnects with reduced contact resistance

Graphene and metal interconnects

E-fuse with hybrid metallization

Vertical electronic fuse

Electronic fuse having a damaged region

Electronic fuse vias in interconnect structures

Semiconductor interconnect structure having a graphene-based barrier metal layer

Back-end electrically programmable fuse

Selective local metal cap layer formation for improved electromigration behavior

Modified via bottom for beol via efuse

Selective local metal cap layer formation for improved electromigration behavior

GLOBALFOUNDRIES INC

Structure with air gap crack stop

Metal fuse structure for improved programming capability

Method for manufacturing in a semiconductor device a low resistance via without a bottom liner

Graphene-metal E-fuse

Metal lines having etch-bias independent height

BAO JUNJING

Method of improving mechanical properties of semiconductor interconnects with nanoparticles

Back-end electrically programmable fuse

Electronic anti-fuse

Semiconductor interconnect structure having a graphene-based barrier metal layer

BONILLA GRISELDA

Metal fuse structure for improved programming capability

Method to resolve hollow metal defects in interconnects