Inventor
NALLAPATI GIRIDHAR
US23 patents
⚠️ This page may combine multiple inventors who share the name “NALLAPATI GIRIDHAR”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
QUALCOMM INC
22 patentsUS9070551B2Jun 30, 2015
Method and apparatus for a diffusion bridged cell library
QUALCOMM INC60 citations94
US8782576B1Jul 15, 2014
Method and apparatus for a diffusion bridged cell library
QUALCOMM INC73 citations94
US10651122B1May 12, 2020
Integrated circuit (IC) interconnect structure having a metal layer with asymmetric metal line-dielectric structures supporting self-aligned vertical interconnect accesses (VIAS)
QUALCOMM INC12 citations86
US8836040B2Sep 16, 2014
Shared-diffusion standard cell architecture
QUALCOMM INC17 citations83
US11404373B2Aug 2, 2022
Hybrid low resistance metal lines
QUALCOMM INC2 citations73
US9024418B2May 5, 2015
Local interconnect structures for high density
QUALCOMM INC5 citations73
US10247617B2Apr 2, 2019
Middle-of-line (MOL) metal resistor temperature sensors for localized temperature sensing of active semiconductor areas in integrated circuits (ICs)
QUALCOMM INC2 citations72
US9818817B2Nov 14, 2017
Metal-insulator-metal capacitor over conductive layer
QUALCOMM INC2 citations71
US12218041B2Feb 4, 2025
Integrated circuit (IC) packages employing a capacitor-embedded, redistribution layer (RDL) substrate for interfacing an IC chip(s) to a package substrate, and related methods
QUALCOMM INC1 citations63
US11973019B2Apr 30, 2024
Deep trench capacitors in an inter-layer medium on an interconnect layer of an integrated circuit die and related methods
QUALCOMM INC0 citations62
US10636737B2Apr 28, 2020
Structure and method of metal wraparound for low via resistance
QUALCOMM INC1 citations61
US12446264B2Oct 14, 2025
Complementary field effect transistor (CFET) with balanced N and P drive current
QUALCOMM INC0 citations52
US12342595B2Jun 24, 2025
Transistor cell with self-aligned gate contact
QUALCOMM INC0 citations52
US11942414B2Mar 26, 2024
Integrated circuits (ICs) employing directly coupled metal lines between vertically-adjacent interconnect layers for reduced coupling resistance, and related methods
QUALCOMM INC0 citations52
US10418244B2Sep 17, 2019
Modified self-aligned quadruple patterning (SAQP) processes using cut pattern masks to fabricate integrated circuit (IC) cells with reduced area
QUALCOMM INC0 citations52
US10325979B1Jun 18, 2019
High density and reliable vertical natural capacitors
QUALCOMM INC0 citations52
US11973020B2Apr 30, 2024
Metal-insulator-metal capacitor with top contact
QUALCOMM INC0 citations51
US11437379B2Sep 6, 2022
Field-effect transistors (FET) circuits employing topside and backside contacts for topside and backside routing of FET power and logic signals, and related complementary metal oxide semiconductor (CMOS) circuits
QUALCOMM INC0 citations51
US9287347B2Mar 15, 2016
Metal-insulator-metal capacitor under redistribution layer
QUALCOMM INC0 citations51
US9245971B2Jan 26, 2016
Semiconductor device having high mobility channel
QUALCOMM INC0 citations49
US10686031B2Jun 16, 2020
Finger metal-oxide-metal (FMOM) capacitor
QUALCOMM INC0 citations41
US10847507B2Nov 24, 2020
Contact liner to enable different CPP devices
QUALCOMM INC0 citations40