Inventor

SEOL MINSU

KR44 patents

Patents

44 patents

US10199958B2Feb 5, 2019

Triboelectric generator

SAMSUNG ELECTRONICS CO LTD10 citations83

US11588034B2Feb 21, 2023

Field effect transistor including gate insulating layer formed of two-dimensional material

SAMSUNG ELECTRONICS CO LTD4 citations74

US10928723B2Feb 23, 2021

Pellicle for photomask, reticle including the same, and exposure apparatus for lithography

SAMSUNG ELECTRONICS CO LTD2 citations73

US10424490B2Sep 24, 2019

Hardmask composition, method of forming pattern using the hardmask composition, and hardmask formed from the hardmask composition

SAMSUNG ELECTRONICS CO LTD3 citations73

US10014799B2Jul 3, 2018

Triboelectric generator

SAMSUNG ELECTRONICS CO LTD5 citations73

US9905422B2Feb 27, 2018

Two-dimensional material hard mask, method of manufacturing the same, and method of forming material layer pattern using the hard mask

SAMSUNG ELECTRONICS CO LTD2 citations73

US10808142B2Oct 20, 2020

Method of preparing graphene quantum dot, hardmask composition including the graphene quantum dot obtained by the method, method of forming patterns using the hardmask composition, and hardmask formed from the hardmask composition

SAMSUNG ELECTRONICS CO LTD2 citations72

US10551735B2Feb 4, 2020

Pellicle composition for photomask, pellicle for photomask formed from the pellicle composition, method of forming the pellicle, reticle including the pellicle, and exposure apparatus for lithography including the reticle

SAMSUNG ELECTRONICS CO LTD2 citations72

US11404182B2Aug 2, 2022

Conductive composite structure for electronic device, method of preparing the same, electrode for electronic device including the conductive composite structure, and electronic device including the conductive composite structure

SAMSUNG ELECTRONICS CO LTD2 citations71

US10873277B2Dec 22, 2020

Interconnect structure, electronic device including the same, and method of manufacturing interconnect structure

SAMSUNG ELECTRONICS CO LTD0 citations62

US12255244B2Mar 18, 2025

Field effect transistor including gate insulating layer formed of two-dimensional material

SAMSUNG ELECTRONICS CO LTD0 citations62

US12087818B2Sep 10, 2024

Transistor including two-dimensional (2D) channel

SAMSUNG ELECTRONICS CO LTD0 citations62

US12062697B2Aug 13, 2024

Semiconductor device including two-dimensional semiconductor material

SAMSUNG ELECTRONICS CO LTD0 citations62

US12027588B2Jul 2, 2024

Field effect transistor including channel formed of 2D material

SAMSUNG ELECTRONICS CO LTD0 citations62

US12002882B2Jun 4, 2024

Vertical type transistor, inverter including the same, and vertical type semiconductor device including the same

SAMSUNG ELECTRONICS CO LTD0 citations62

US11563116B2Jan 24, 2023

Vertical type transistor, inverter including the same, and vertical type semiconductor device including the same

SAMSUNG ELECTRONICS CO LTD1 citations62

US11532709B2Dec 20, 2022

Field effect transistor including channel formed of 2D material

SAMSUNG ELECTRONICS CO LTD1 citations62

US11508814B2Nov 22, 2022

Transistor including two-dimensional (2D) channel

SAMSUNG ELECTRONICS CO LTD0 citations62

US11508815B2Nov 22, 2022

Semiconductor device including two-dimensional semiconductor material

SAMSUNG ELECTRONICS CO LTD0 citations62

US11281092B2Mar 22, 2022

Pellicle for extreme ultraviolet lithography and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD1 citations62

US11086223B2Aug 10, 2021

Hardmask composition and method of forming pattern using the hardmask composition

SAMSUNG ELECTRONICS CO LTD1 citations62

US10777412B2Sep 15, 2020

Hardmask composition, method of preparing the same, and method of forming patterned layer by using the hardmask composition

SAMSUNG ELECTRONICS CO LTD1 citations62

US10681464B2Jun 9, 2020

Acoustic diaphragm including graphene and acoustic device employing the same

SAMSUNG ELECTRONICS CO LTD1 citations62

US10495972B2Dec 3, 2019

Hardmask composition and method of forming pattern using the hardmask composition

SAMSUNG ELECTRONICS CO LTD1 citations62

US12402374B2Aug 26, 2025

Electronic device including two-dimensional material and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD0 citations61

US12356668B2Jul 8, 2025

Field effect transistor including channels having a hollow closed cross-sectional structure and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD0 citations61

US12142697B2Nov 12, 2024

Two-dimensional material-based wiring conductive layer contact structures, electronic devices including the same, and methods of manufacturing the electronic devices

SAMSUNG ELECTRONICS CO LTD0 citations61

US11935790B2Mar 19, 2024

Field effect transistor and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD0 citations61

US11830952B2Nov 28, 2023

Two-dimensional material-based wiring conductive layer contact structures, electronic devices including the same, and methods of manufacturing the electronic devices

SAMSUNG ELECTRONICS CO LTD0 citations61

US12336259B2Jun 17, 2025

Electronic device including two-dimensional material and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD0 citations60

US12191392B2Jan 7, 2025

Semiconductor device including two-dimensional material

SAMSUNG ELECTRONICS CO LTD0 citations60

US12334357B2Jun 17, 2025

Method of forming material layer

SAMSUNG ELECTRONICS CO LTD0 citations59

US10685844B2Jun 16, 2020

Hardmask composition, method of forming pattern by using the hardmask composition, and hardmask formed using the hardmask composition

SAMSUNG ELECTRONICS CO LTD1 citations59

US11463023B2Oct 4, 2022

Triboelectric generator

SAMSUNG ELECTRONICS CO LTD0 citations58

US11431265B2Aug 30, 2022

Triboelectric generator

SAMSUNG ELECTRONICS CO LTD0 citations57

US12199129B2Jan 14, 2025

Image sensors integrated with infrared sensors and electronic devices including the same

SAMSUNG ELECTRONICS CO LTD0 citations52

US10133176B2Nov 20, 2018

Hardmask composition and method of forming pattern using the same

SAMSUNG ELECTRONICS CO LTD0 citations52

US11034847B2Jun 15, 2021

Hardmask composition, method of forming pattern using hardmask composition, and hardmask formed from hardmask composition

SAMSUNG ELECTRONICS CO LTD0 citations51

US11961898B2Apr 16, 2024

Method of patterning two-dimensional material layer on substrate, and method of fabricating semiconductor device

SAMSUNG ELECTRONICS CO LTD0 citations49

US12122732B2Oct 22, 2024

Functionalized polycyclic aromatic hydrocarbon compound and light-emitting device including the same

SAMSUNG ELECTRONICS CO LTD0 citations48

US12211904B2Jan 28, 2025

Black phosphorus-two dimensional material complex and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD0 citations44