Inventor
RISEMAN JACOB
US34 patents
Patents
34 patentsUS4419809ADec 13, 1983
Fabrication process of sub-micrometer channel length MOSFETs
IBM332 citations99
US4234362ANov 18, 1980
Method for forming an insulator between layers of conductive material
IBM288 citations99
US4671851AJun 9, 1987
Method for removing protuberances at the surface of a semiconductor wafer using a chem-mech polishing technique
IBM189 citations98
US4648937AMar 10, 1987
Method of preventing asymmetric etching of lines in sub-micrometer range sidewall images transfer
IBM348 citations98
US4944836AJul 31, 1990
Chem-mech polishing method for producing coplanar metal/insulator films on a substrate
IBM539 citations97
US4521952AJun 11, 1985
Method of making integrated circuits using metal silicide contacts
IBM81 citations96
US4419810ADec 13, 1983
Self-aligned field effect transistor process
IBM89 citations96
US4356211AOct 26, 1982
Forming air-dielectric isolation regions in a monocrystalline silicon substrate by differential oxidation of polysilicon
IBM102 citations96
US4169000ASep 25, 1979
Method of forming an integrated circuit structure with fully-enclosed air isolation
IBM79 citations96
US4462040AJul 24, 1984
Single electrode U-MOSFET random access memory
IBM60 citations95
US4252579AFeb 24, 1981
Method for making single electrode U-MOSFET random access memory utilizing reactive ion etching and polycrystalline deposition
IBM72 citations95
US4209350AJun 24, 1980
Method for forming diffusions having narrow dimensions utilizing reactive ion etching
IBM65 citations95
US4209349AJun 24, 1980
Method for forming a narrow dimensioned mask opening on a silicon body utilizing reactive ion etching
IBM95 citations95
US4090254AMay 16, 1978
Charge injector transistor memory
IBM57 citations94
US4641170AFeb 3, 1987
Self-aligned lateral bipolar transistors
IBM32 citations93
US4032058AJun 28, 1977
Beam-lead integrated circuit structure and method for making the same including automatic registration of beam-leads with corresponding dielectric substrate leads
IBM44 citations93
US4729006AMar 1, 1988
Sidewall spacers for CMOS circuit stress relief/isolation and method for making
IBM51 citations92
US4689113AAug 25, 1987
Process for forming planar chip-level wiring
IBM49 citations92
US4583106AApr 15, 1986
Fabrication methods for high performance lateral bipolar transistors
IBM39 citations92
US4546536AOct 15, 1985
Fabrication methods for high performance lateral bipolar transistors
IBM42 citations92
US4506435AMar 26, 1985
Method for forming recessed isolated regions
IBM45 citations92
US4492717AJan 8, 1985
Method for forming a planarized integrated circuit
IBM28 citations92
US4507171AMar 26, 1985
Method for contacting a narrow width PN junction region
IBM29 citations89
US4551906ANov 12, 1985
Method for making self-aligned lateral bipolar transistors
IBM21 citations82
US3997963ADec 21, 1976
Novel beam-lead integrated circuit structure and method for making the same including automatic registration of beam-leads with corresponding dielectric substrate leads
IBM31 citations82
US4544576AOct 1, 1985
Deep dielectric isolation by fused glass
IBM24 citations81
US3943542AMar 9, 1976
High reliability, low leakage, self-aligned silicon gate FET and method of fabricating same
IBM30 citations81
US4464212AAug 7, 1984
Method for making high sheet resistivity resistors
IBM11 citations74
US4106050AAug 8, 1978
Integrated circuit structure with fully enclosed air isolation
IBM12 citations74
US3972754AAug 3, 1976
Method for forming dielectric isolation in integrated circuits
IBM12 citations74
US4054989AOct 25, 1977
High reliability, low leakage, self-aligned silicon gate FET and method of fabricating same
IBM8 citations73
US4017883AApr 12, 1977
Single-electrode charge-coupled random access memory cell with impurity implanted gate region
IBM10 citations73
US4070687AJan 24, 1978
Composite channel field effect transistor and method of fabrication
IBM17 citations71
US4712125ADec 8, 1987
Structure for contacting a narrow width PN junction region
IBM18 citations70