Inventor · disambiguated record
Takahide Ikeda
Also filed as: IKEDA TAKAHIDE
38 granted patents·1,194 citations·filing 1974–2004
98Inventor score
Top patents by PatentIndex Score
38 records- 0195US5726488ASemiconductor device having semiconductor elements formed in a retrograde well structureHITACHI LTD·Filed 1994·Granted Mar 10, 1998·134 cites·11 claims
- 0293US5386135ASemiconductor CMOS memory device with separately biased wellsHITACHI LTD·Filed 1994·Granted Jan 31, 1995·83 cites·12 claims
- 0391US6740958B2Semiconductor memory deviceRENESAS TECH CORP·Filed 2002·Granted May 25, 2004·60 cites·27 claims
- 0491US6063686AMethod of manufacturing an improved SOI (silicon-on-insulator) semiconductor integrated circuit deviceFiled 1998·Granted May 16, 2000·134 cites·40 claims
- 0590US5497023ASemiconductor memory device having separately biased wells for isolationHITACHI LTD·Filed 1994·Granted Mar 5, 1996·67 cites·15 claims
- 0687US5661329ASemiconductor integrated circuit device including an improved separating groove arrangementHITACHI LTD·Filed 1994·Granted Aug 26, 1997·73 cites·16 claims
- 0785US4921811ASemiconductor integrated circuit device and a method for manufacturing the sameHITACHI LTD·Filed 1988·Granted May 1, 1990·33 cites·42 claims
- 0883US4862240AComplementary semiconductor deviceHITACHI LTD·Filed 1987·Granted Aug 29, 1989·62 cites·21 claims
- 0981US5324982ASemiconductor memory device having bipolar transistor and structure to avoid soft errorHITACHI LTD·Filed 1991·Granted Jun 28, 1994·36 cites·31 claims
- 1080US5793097ASemiconductor device having conducting structureHITACHI LTD·Filed 1995·Granted Aug 11, 1998·30 cites·27 claims
- 1179US5148255ASemiconductor memory deviceHITACHI LTD·Filed 1991·Granted Sep 15, 1992·45 cites·59 claims
- 1277US4984200ASemiconductor circuit device having a plurality of SRAM type memory cell arrangementHITACHI LTD·Filed 1988·Granted Jan 8, 1991·46 cites·20 claims
- 1374US5354699AMethod of manufacturing semiconductor integrated circuit deviceHITACHI LTD·Filed 1992·Granted Oct 11, 1994·33 cites·12 claims
- 1474US4005450AInsulated gate field effect transistor having drain region containing low impurity concentration layerHITACHI LTD·Filed 1974·Granted Jan 25, 1977·19 cites·13 claims
- 1573US6208010B1Semiconductor memory deviceHITACHI LTD·Filed 1995·Granted Mar 27, 2001·25 cites·31 claims
- 1673US4980744ASemiconductor integrated circuit device and a method for manufacturing the sameHITACHI LTD·Filed 1988·Granted Dec 25, 1990·20 cites·36 claims
- 1770US5321650ABiCMOS semiconductor memory device using load transistors formed on an insulating filmHITACHI LTD·Filed 1992·Granted Jun 14, 1994·31 cites·13 claims
- 1868US6392277B1Semiconductor deviceHITACHI LTD·Filed 1998·Granted May 21, 2002·23 cites·25 claims
- 1968US4799098AMOS/bipolar device with stepped buried layer under active regionsHITACHI LTD·Filed 1987·Granted Jan 17, 1989·25 cites·14 claims
- 2066US5508549ASemiconductor integrated circuit device and a method for manufacturing the sameHITACHI LTD·Filed 1991·Granted Apr 16, 1996·18 cites·22 claims
- 2165US5026654AMethod of manufacturing a semiconductor device utilizing a single polycrystalline layer for all electrodesHITACHI LTD·Filed 1988·Granted Jun 25, 1991·23 cites·17 claims
- 2265US4377421AMethod of making a stacked emitter in a bipolar transistor by selective laser irradiationHITACHI LTD·Filed 1980·Granted Mar 22, 1983·26 cites·12 claims
- 2363US6835632B2Semiconductor device and process of producing the sameHITACHI LTD·Filed 2003·Granted Dec 28, 2004·6 cites·4 claims
- 2461US4963973ASemiconductor deviceHITACHI LTD·Filed 1989·Granted Oct 16, 1990·17 cites·3 claims
- 2560US7238582B2Semiconductor device and process of producing the sameHITACHI DEVICE ENG·Filed 2004·Granted Jul 3, 2007·5 cites·6 claims
- 2660US6610569B1Semiconductor device and process of producing the sameHITACHI LTD·Filed 2000·Granted Aug 26, 2003·5 cites·33 claims
- 2759US6864559B2Semiconductor memory deviceRENESAS TECH CORP·Filed 2003·Granted Mar 8, 2005·7 cites·18 claims
- 2859US5512497AMethod of manufacturing a semiconductor integrated circuit deviceHITACHI LTD·Filed 1994·Granted Apr 30, 1996·17 cites·26 claims
- 2955US6727152B2Semiconductor deviceRENESAS TECH CORP·Filed 2002·Granted Apr 27, 2004·5 cites·16 claims
- 3055US5057894ASemiconductor integrated circuit deviceHITACHI LTD·Filed 1990·Granted Oct 15, 1991·18 cites·14 claims
- 3155US4089020AHigh power semiconductor diodeHITACHI LTD·Filed 1976·Granted May 9, 1978·14 cites·4 claims
- 3251US6133094ASemiconductor device and process of producing the sameHITACHI LTD·Filed 1998·Granted Oct 17, 2000·7 cites·10 claims
- 3350US4578693ASemiconductive photodetector deviceHITACHI LTD·Filed 1983·Granted Mar 25, 1986·12 cites·25 claims
- 3448US5643805AProcess for producing a bipolar deviceHITACHI LTD·Filed 1995·Granted Jul 1, 1997·13 cites·12 claims
- 3547US5672897ABimos semiconductor integrated circuit device including high speed vertical bipolar transistorsHITACHI LTD·Filed 1995·Granted Sep 30, 1997·7 cites·11 claims
- 3645US5049967ASemiconductor integrated circuit device and a method for manufacturing the sameHITACHI LTD·Filed 1990·Granted Sep 17, 1991·7 cites·52 claims
- 3738US5619069ABipolar device and production thereofHITACHI LTD·Filed 1995·Granted Apr 8, 1997·6 cites·14 claims
- 3835US6524924B1Semiconductor device and process of producing the sameHITACHI LTD·Filed 1998·Granted Feb 25, 2003·2 cites·9 claims
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