Inventor
OGURO SHIZUO
JP7 patents
Patents
7 patentsUS5443661AAug 22, 1995
SOI (silicon on insulator) substrate with enhanced gettering effects
NEC CORP107 citations97
US5798544AAug 25, 1998
Semiconductor memory device having trench isolation regions and bit lines formed thereover
NEC CORP105 citations96
US5242855ASep 7, 1993
Method of fabricating a polycrystalline silicon film having a reduced resistivity
NEC CORP117 citations96
US6074478AJun 13, 2000
Method of facet free selective silicon epitaxy
NEC CORP38 citations91
US5714415AFeb 3, 1998
Method of forming thin semiconductor film
NEC CORP30 citations91
US5371039ADec 6, 1994
Method for fabricating capacitor having polycrystalline silicon film
NEC CORP36 citations91
US5464795ANov 7, 1995
Method of forming polycrystalline silicon thin films for semiconductor devices
NEC CORP8 citations72