P

Inventor

OHI MAKOTO

JP17 patents
⚠️ This page may combine multiple inventors who share the name “OHI MAKOTO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

MITSUBISHI ELECTRIC CORP

14 patents
US5745417AApr 28, 1998

Electrically programmable and erasable nonvolatile semiconductor memory device and operating method therefor

MITSUBISHI ELECTRIC CORP135 citations99
US5898606AApr 27, 1999

Electrically programmable and erasable nonvolatile semiconductor memory device and operating method therefor

MITSUBISHI ELECTRIC CORP63 citations96
US5523596AJun 4, 1996

Semiconductor device having capacitor and manufacturing method therefor

MITSUBISHI ELECTRIC CORP53 citations96
US5672533ASep 30, 1997

Field effect transistor having impurity regions of different depths and manufacturing method thereof

MITSUBISHI ELECTRIC CORP37 citations92
US5538912AJul 23, 1996

Method of making memory cells with peripheral transistors

MITSUBISHI ELECTRIC CORP38 citations92
US5489791AFeb 6, 1996

Field effect transistor having impurity regions of different depths and manufacturing method thereof

MITSUBISHI ELECTRIC CORP22 citations92
US5400278AMar 21, 1995

Semiconductor memory device and method of manufacturing the same

MITSUBISHI ELECTRIC CORP24 citations92
US5229314AJul 20, 1993

Method of manufacturing field effect transistor having a multilayer interconnection layer therein with tapered sidewall insulation

MITSUBISHI ELECTRIC CORP33 citations92
US5276344AJan 4, 1994

Field effect transistor having impurity regions of different depths and manufacturing method thereof

MITSUBISHI ELECTRIC CORP17 citations82
US5683929ANov 4, 1997

Method of manufacturing a semiconductor device having a capacitor

MITSUBISHI ELECTRIC CORP9 citations74
US5338957AAug 16, 1994

Nonvolatile semiconductor device and a method of manufacturing thereof

MITSUBISHI ELECTRIC CORP12 citations74
US5338699AAug 16, 1994

Method of making a semiconductor integrated device having gate sidewall structure

MITSUBISHI ELECTRIC CORP8 citations74
US5233212AAug 3, 1993

Semiconductor device having gate electrode spacing dependent upon gate side wall insulating dimension

MITSUBISHI ELECTRIC CORP9 citations74
US5157469AOct 20, 1992

Field effect transistor having a multilayer interconnection layer therein with tapered sidewall insulators

MITSUBISHI ELECTRIC CORP0 citations42

OHI MAKOTO

2 patents

ARITA HIDEKAZU

1 patent