Inventor
OHI MAKOTO
JP17 patents
⚠️ This page may combine multiple inventors who share the name “OHI MAKOTO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MITSUBISHI ELECTRIC CORP
14 patentsUS5745417AApr 28, 1998
Electrically programmable and erasable nonvolatile semiconductor memory device and operating method therefor
MITSUBISHI ELECTRIC CORP135 citations99
US5898606AApr 27, 1999
Electrically programmable and erasable nonvolatile semiconductor memory device and operating method therefor
MITSUBISHI ELECTRIC CORP63 citations96
US5523596AJun 4, 1996
Semiconductor device having capacitor and manufacturing method therefor
MITSUBISHI ELECTRIC CORP53 citations96
US5672533ASep 30, 1997
Field effect transistor having impurity regions of different depths and manufacturing method thereof
MITSUBISHI ELECTRIC CORP37 citations92
US5538912AJul 23, 1996
Method of making memory cells with peripheral transistors
MITSUBISHI ELECTRIC CORP38 citations92
US5489791AFeb 6, 1996
Field effect transistor having impurity regions of different depths and manufacturing method thereof
MITSUBISHI ELECTRIC CORP22 citations92
US5400278AMar 21, 1995
Semiconductor memory device and method of manufacturing the same
MITSUBISHI ELECTRIC CORP24 citations92
US5229314AJul 20, 1993
Method of manufacturing field effect transistor having a multilayer interconnection layer therein with tapered sidewall insulation
MITSUBISHI ELECTRIC CORP33 citations92
US5276344AJan 4, 1994
Field effect transistor having impurity regions of different depths and manufacturing method thereof
MITSUBISHI ELECTRIC CORP17 citations82
US5683929ANov 4, 1997
Method of manufacturing a semiconductor device having a capacitor
MITSUBISHI ELECTRIC CORP9 citations74
US5338957AAug 16, 1994
Nonvolatile semiconductor device and a method of manufacturing thereof
MITSUBISHI ELECTRIC CORP12 citations74
US5338699AAug 16, 1994
Method of making a semiconductor integrated device having gate sidewall structure
MITSUBISHI ELECTRIC CORP8 citations74
US5233212AAug 3, 1993
Semiconductor device having gate electrode spacing dependent upon gate side wall insulating dimension
MITSUBISHI ELECTRIC CORP9 citations74
US5157469AOct 20, 1992
Field effect transistor having a multilayer interconnection layer therein with tapered sidewall insulators
MITSUBISHI ELECTRIC CORP0 citations42