P

Inventor

BARSAN RADU

US14 patents
⚠️ This page may combine multiple inventors who share the name “BARSAN RADU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

ADVANCED MICRO DEVICES INC

12 patents
US5646901AJul 8, 1997

CMOS memory cell with tunneling during program and erase through the NMOS and PMOS transistors and a pass gate separating the NMOS and PMOS transistors

ADVANCED MICRO DEVICES INC102 citations98
US5587945ADec 24, 1996

CMOS EEPROM cell with tunneling window in the read path

ADVANCED MICRO DEVICES INC108 citations97
US6071784AJun 6, 2000

Annealing of silicon oxynitride and silicon nitride films to eliminate high temperature charge loss

ADVANCED MICRO DEVICES INC53 citations96
US5854114ADec 29, 1998

Data retention of EEPROM cell with shallow trench isolation using thicker liner oxide

ADVANCED MICRO DEVICES INC50 citations96
US5761116AJun 2, 1998

Vpp only scalable EEPROM memory cell having transistors with thin tunnel gate oxide

ADVANCED MICRO DEVICES INC38 citations92
US5615150AMar 25, 1997

Control gate-addressed CMOS non-volatile cell that programs through gates of CMOS transistors

ADVANCED MICRO DEVICES INC50 citations92
US5594687AJan 14, 1997

Completely complementary MOS memory cell with tunneling through the NMOS and PMOS transistors during program and erase

ADVANCED MICRO DEVICES INC26 citations92
US5830795ANov 3, 1998

Simplified masking process for programmable logic device manufacture

ADVANCED MICRO DEVICES INC14 citations74
US6211022B1Apr 3, 2001

Field leakage by using a thin layer of nitride deposited by chemical vapor deposition

ADVANCED MICRO DEVICES INC4 citations63
US5908308AJun 1, 1999

Use of borophosphorous tetraethyl orthosilicate (BPTEOS) to improve isolation in a transistor array

ADVANCED MICRO DEVICES INC6 citations63
US5700698ADec 23, 1997

Method for screening non-volatile memory and programmable logic devices

ADVANCED MICRO DEVICES INC5 citations63
US5841701ANov 24, 1998

Method of charging and discharging floating gage transistors to reduce leakage current

ADVANCED MICRO DEVICES INC1 citations52

VANTIS CORP

1 patent

Redfern Integrated Optics

1 patent