Inventor
UCHIYAMA KIYOSHI
US19 patents
⚠️ This page may combine multiple inventors who share the name “UCHIYAMA KIYOSHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD
9 patentsUS6489645B1Dec 3, 2002
Integrated circuit device including a layered superlattice material with an interface buffer layer
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD28 citations92
US6396095B1May 28, 2002
Semiconductor memory and method of driving semiconductor memory
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD14 citations84
US6876030B2Apr 5, 2005
Semiconductor memory device
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD7 citations74
US6351004B1Feb 26, 2002
Tunneling transistor applicable to nonvolatile memory
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD13 citations74
US6605477B2Aug 12, 2003
Integrated circuit device including a layered superlattice material with an interface buffer layer
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD11 citations73
US5222074AJun 22, 1993
Thermal decomposition cell
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD9 citations73
US5194400AMar 16, 1993
Method for fabricating a semiconductor laser device using (Alx Ga1-x)y In1-y P semiconductor clad layers
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD14 citations73
US6713799B2Mar 30, 2004
Electrodes for ferroelectric components
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD4 citations63
US6580632B2Jun 17, 2003
Semiconductor memory device, method for driving the same and method for fabricating the same
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD4 citations63
SYMETRIX CORP
7 patentsUS6831313B2Dec 14, 2004
Ferroelectric composite material, method of making same and memory utilizing same
SYMETRIX CORP34 citations92
US6787181B2Sep 7, 2004
Chemical vapor deposition method of making layered superlattice materials using trimethylbismuth
SYMETRIX CORP34 citations92
US6326315B1Dec 4, 2001
Low temperature rapid ramping anneal method for fabricating layered superlattice materials and making electronic devices including same
SYMETRIX CORP43 citations92
US6562678B1May 13, 2003
Chemical vapor deposition process for fabricating layered superlattice materials
SYMETRIX CORP14 citations84
US6706585B2Mar 16, 2004
Chemical vapor deposition process for fabricating layered superlattice materials
SYMETRIX CORP7 citations74
US6607980B2Aug 19, 2003
Rapid-temperature pulsing anneal method at low temperature for fabricating layered superlattice materials and making electronic devices including same
SYMETRIX CORP9 citations74
US6660536B2Dec 9, 2003
Method of making ferroelectric material utilizing anneal in an electrical field
SYMETRIX CORP1 citations52