Inventor
VARADARAJAN SESHASAYEE
US47 patents
⚠️ This page may combine multiple inventors who share the name “VARADARAJAN SESHASAYEE”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
NOVELLUS SYSTEMS INC
21 patentsUS6964792B1Nov 15, 2005
Methods and apparatus for controlling electrolyte flow for uniform plating
NOVELLUS SYSTEMS INC121 citations98
US6551487B1Apr 22, 2003
Methods and apparatus for controlled-angle wafer immersion
NOVELLUS SYSTEMS INC145 citations98
US7648899B1Jan 19, 2010
Interfacial layers for electromigration resistance improvement in damascene interconnects
NOVELLUS SYSTEMS INC78 citations97
US6586342B1Jul 1, 2003
Edge bevel removal of copper from silicon wafers
NOVELLUS SYSTEMS INC76 citations97
US7858510B1Dec 28, 2010
Interfacial layers for electromigration resistance improvement in damascene interconnects
NOVELLUS SYSTEMS INC50 citations94
US6821407B1Nov 23, 2004
Anode and anode chamber for copper electroplating
NOVELLUS SYSTEMS INC97 citations93
US9309604B2Apr 12, 2016
Method and apparatus for electroplating
NOVELLUS SYSTEMS INC18 citations92
US8377268B2Feb 19, 2013
Electroplating cup assembly
NOVELLUS SYSTEMS INC19 citations92
US7985325B2Jul 26, 2011
Closed contact electroplating cup assembly
NOVELLUS SYSTEMS INC36 citations92
US7935231B2May 3, 2011
Rapidly cleanable electroplating cup assembly
NOVELLUS SYSTEMS INC36 citations92
US7906817B1Mar 15, 2011
High compressive stress carbon liners for MOS devices
NOVELLUS SYSTEMS INC40 citations92
US7854828B2Dec 21, 2010
Method and apparatus for electroplating including remotely positioned second cathode
NOVELLUS SYSTEMS INC50 citations92
US7686927B1Mar 30, 2010
Methods and apparatus for controlled-angle wafer positioning
NOVELLUS SYSTEMS INC26 citations92
US7097410B1Aug 29, 2006
Methods and apparatus for controlled-angle wafer positioning
NOVELLUS SYSTEMS INC28 citations92
US7799684B1Sep 21, 2010
Two step process for uniform across wafer deposition and void free filling on ruthenium coated wafers
NOVELLUS SYSTEMS INC22 citations90
US7780867B1Aug 24, 2010
Edge bevel removal of copper from silicon wafers
NOVELLUS SYSTEMS INC45 citations90
US8362571B1Jan 29, 2013
High compressive stress carbon liners for MOS devices
NOVELLUS SYSTEMS INC5 citations84
US7998881B1Aug 16, 2011
Method for making high stress boron-doped carbon films
NOVELLUS SYSTEMS INC11 citations84
US7456102B1Nov 25, 2008
Electroless copper fill process
NOVELLUS SYSTEMS INC15 citations84
US7799671B1Sep 21, 2010
Interfacial layers for electromigration resistance improvement in damascene interconnects
NOVELLUS SYSTEMS INC11 citations82
US10472730B2Nov 12, 2019
Electrolyte concentration control system for high rate electroplating
NOVELLUS SYSTEMS INC2 citations73
LAM RES CORP
16 patentsUS10347547B2Jul 9, 2019
Suppressing interfacial reactions by varying the wafer temperature throughout deposition
LAM RES CORP401 citations98
US9824884B1Nov 21, 2017
Method for depositing metals free ald silicon nitride films using halide-based precursors
LAM RES CORP348 citations98
US9601693B1Mar 21, 2017
Method for encapsulating a chalcogenide material
LAM RES CORP43 citations98
US11088019B2Aug 10, 2021
Method to create air gaps
LAM RES CORP17 citations94
US11970776B2Apr 30, 2024
Atomic layer deposition of metal films
LAM RES CORP9 citations85
US11637037B2Apr 25, 2023
Method to create air gaps
LAM RES CORP12 citations85
US11549175B2Jan 10, 2023
Method of depositing tungsten and other metals in 3D NAND structures
LAM RES CORP17 citations85
US10378107B2Aug 13, 2019
Low volume showerhead with faceplate holes for improved flow uniformity
LAM RES CORP11 citations83
US12112980B2Oct 8, 2024
Method to create air gaps
LAM RES CORP4 citations75
US12351914B2Jul 8, 2025
Deposition of films using molybdenum precursors
LAM RES CORP2 citations74
US9624578B2Apr 18, 2017
Method for RF compensation in plasma assisted atomic layer deposition
LAM RES CORP2 citations71
US11075127B2Jul 27, 2021
Suppressing interfacial reactions by varying the wafer temperature throughout deposition
LAM RES CORP0 citations62
US12588475B2Mar 24, 2026
High selectivity doped hardmask films
LAM RES CORP0 citations56
US9353444B2May 31, 2016
Two-step deposition with improved selectivity
LAM RES CORP0 citations52
US10020188B2Jul 10, 2018
Method for depositing ALD films using halide-based precursors
LAM RES CORP0 citations51
US9029258B2May 12, 2015
Through silicon via metallization
LAM RES CORP0 citations43