Inventor
HENRI JON
US57 patents
⚠️ This page may combine multiple inventors who share the name “HENRI JON”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
NOVELLUS SYSTEMS INC
24 patentsUS9786570B2Oct 10, 2017
Methods for depositing films on sensitive substrates
NOVELLUS SYSTEMS INC362 citations99
US7381644B1Jun 3, 2008
Pulsed PECVD method for modulating hydrogen content in hard mask
NOVELLUS SYSTEMS INC555 citations99
US9287113B2Mar 15, 2016
Methods for depositing films on sensitive substrates
NOVELLUS SYSTEMS INC74 citations98
US7981810B1Jul 19, 2011
Methods of depositing highly selective transparent ashable hardmask films
NOVELLUS SYSTEMS INC54 citations98
US6793796B2Sep 21, 2004
Electroplating process for avoiding defects in metal features of integrated circuit devices
NOVELLUS SYSTEMS INC92 citations98
US8999859B2Apr 7, 2015
Plasma activated conformal dielectric film deposition
NOVELLUS SYSTEMS INC56 citations96
US7915166B1Mar 29, 2011
Diffusion barrier and etch stop films
NOVELLUS SYSTEMS INC70 citations96
US7704894B1Apr 27, 2010
Method of eliminating small bin defects in high throughput TEOS films
NOVELLUS SYSTEMS INC50 citations96
US10008428B2Jun 26, 2018
Methods for depositing films on sensitive substrates
NOVELLUS SYSTEMS INC27 citations94
US9070555B2Jun 30, 2015
Method for depositing a chlorine-free conformal sin film
NOVELLUS SYSTEMS INC31 citations94
US10043655B2Aug 7, 2018
Plasma activated conformal dielectric film deposition
NOVELLUS SYSTEMS INC28 citations93
US9570274B2Feb 14, 2017
Plasma activated conformal dielectric film deposition
NOVELLUS SYSTEMS INC30 citations93
US9230800B2Jan 5, 2016
Plasma activated conformal film deposition
NOVELLUS SYSTEMS INC41 citations93
US6821407B1Nov 23, 2004
Anode and anode chamber for copper electroplating
NOVELLUS SYSTEMS INC97 citations93
US9670579B2Jun 6, 2017
Method for depositing a chlorine-free conformal SiN film
NOVELLUS SYSTEMS INC18 citations92
US7981777B1Jul 19, 2011
Methods of depositing stable and hermetic ashable hardmask films
NOVELLUS SYSTEMS INC42 citations92
US7906817B1Mar 15, 2011
High compressive stress carbon liners for MOS devices
NOVELLUS SYSTEMS INC40 citations92
US6440291B1Aug 27, 2002
Controlled induction by use of power supply trigger in electrochemical processing
NOVELLUS SYSTEMS INC37 citations91
US7955990B2Jun 7, 2011
Method for improved thickness repeatability of PECVD deposited carbon films
NOVELLUS SYSTEMS INC26 citations89
US7923376B1Apr 12, 2011
Method of reducing defects in PECVD TEOS films
NOVELLUS SYSTEMS INC22 citations86
US10741458B2Aug 11, 2020
Methods for depositing films on sensitive substrates
NOVELLUS SYSTEMS INC9 citations84
US8362571B1Jan 29, 2013
High compressive stress carbon liners for MOS devices
NOVELLUS SYSTEMS INC5 citations84
US9240320B1Jan 19, 2016
Methods of depositing smooth and conformal ashable hard mask films
NOVELLUS SYSTEMS INC15 citations82
US8962101B2Feb 24, 2015
Methods and apparatus for plasma-based deposition
NOVELLUS SYSTEMS INC7 citations79
LAM RES CORP
14 patentsUS9875891B2Jan 23, 2018
Selective inhibition in atomic layer deposition of silicon-containing films
LAM RES CORP478 citations99
US9564312B2Feb 7, 2017
Selective inhibition in atomic layer deposition of silicon-containing films
LAM RES CORP415 citations99
US10347547B2Jul 9, 2019
Suppressing interfacial reactions by varying the wafer temperature throughout deposition
LAM RES CORP401 citations98
US9824884B1Nov 21, 2017
Method for depositing metals free ald silicon nitride films using halide-based precursors
LAM RES CORP348 citations98
US9601693B1Mar 21, 2017
Method for encapsulating a chalcogenide material
LAM RES CORP43 citations98
US9214333B1Dec 15, 2015
Methods and apparatuses for uniform reduction of the in-feature wet etch rate of a silicon nitride film formed by ALD
LAM RES CORP539 citations98
US9502238B2Nov 22, 2016
Deposition of conformal films by atomic layer deposition and atomic layer etch
LAM RES CORP55 citations97
US9076646B2Jul 7, 2015
Plasma enhanced atomic layer deposition with pulsed plasma exposure
LAM RES CORP81 citations95
US9589790B2Mar 7, 2017
Method of depositing ammonia free and chlorine free conformal silicon nitride film
LAM RES CORP22 citations94
US9385318B1Jul 5, 2016
Method to integrate a halide-containing ALD film on sensitive materials
LAM RES CORP50 citations94
US10804099B2Oct 13, 2020
Selective inhibition in atomic layer deposition of silicon-containing films
LAM RES CORP13 citations86
US10643846B2May 5, 2020
Selective growth of metal-containing hardmask thin films
LAM RES CORP5 citations83
US10566194B2Feb 18, 2020
Selective deposition of etch-stop layer for enhanced patterning
LAM RES CORP5 citations82
US11107683B2Aug 31, 2021
Selective growth of metal-containing hardmask thin films
LAM RES CORP2 citations72
LAVOIE ADRIEN
2 patentsSUBRAMONIUM PRAMOD
2 patentsSWAMINATHAN SHANKAR
1 patentFANG ZHIYUAN
1 patentHAUSMANN DENNIS
1 patentAPPLIED MATERIALS INC
1 patentYU YONGSIK
1 patentHENRI JON
1 patentBARTLETT CHRISTOPHER M
1 patentNOVELIUS SYSTEMS INC
1 patentShowing the top 50 of 57 patents by PatentIndex Score.