P

Inventor

HENRI JON

US57 patents
⚠️ This page may combine multiple inventors who share the name “HENRI JON”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

NOVELLUS SYSTEMS INC

24 patents
US9786570B2Oct 10, 2017

Methods for depositing films on sensitive substrates

NOVELLUS SYSTEMS INC362 citations99
US7381644B1Jun 3, 2008

Pulsed PECVD method for modulating hydrogen content in hard mask

NOVELLUS SYSTEMS INC555 citations99
US9287113B2Mar 15, 2016

Methods for depositing films on sensitive substrates

NOVELLUS SYSTEMS INC74 citations98
US7981810B1Jul 19, 2011

Methods of depositing highly selective transparent ashable hardmask films

NOVELLUS SYSTEMS INC54 citations98
US6793796B2Sep 21, 2004

Electroplating process for avoiding defects in metal features of integrated circuit devices

NOVELLUS SYSTEMS INC92 citations98
US8999859B2Apr 7, 2015

Plasma activated conformal dielectric film deposition

NOVELLUS SYSTEMS INC56 citations96
US7915166B1Mar 29, 2011

Diffusion barrier and etch stop films

NOVELLUS SYSTEMS INC70 citations96
US7704894B1Apr 27, 2010

Method of eliminating small bin defects in high throughput TEOS films

NOVELLUS SYSTEMS INC50 citations96
US10008428B2Jun 26, 2018

Methods for depositing films on sensitive substrates

NOVELLUS SYSTEMS INC27 citations94
US9070555B2Jun 30, 2015

Method for depositing a chlorine-free conformal sin film

NOVELLUS SYSTEMS INC31 citations94
US10043655B2Aug 7, 2018

Plasma activated conformal dielectric film deposition

NOVELLUS SYSTEMS INC28 citations93
US9570274B2Feb 14, 2017

Plasma activated conformal dielectric film deposition

NOVELLUS SYSTEMS INC30 citations93
US9230800B2Jan 5, 2016

Plasma activated conformal film deposition

NOVELLUS SYSTEMS INC41 citations93
US6821407B1Nov 23, 2004

Anode and anode chamber for copper electroplating

NOVELLUS SYSTEMS INC97 citations93
US9670579B2Jun 6, 2017

Method for depositing a chlorine-free conformal SiN film

NOVELLUS SYSTEMS INC18 citations92
US7981777B1Jul 19, 2011

Methods of depositing stable and hermetic ashable hardmask films

NOVELLUS SYSTEMS INC42 citations92
US7906817B1Mar 15, 2011

High compressive stress carbon liners for MOS devices

NOVELLUS SYSTEMS INC40 citations92
US6440291B1Aug 27, 2002

Controlled induction by use of power supply trigger in electrochemical processing

NOVELLUS SYSTEMS INC37 citations91
US7955990B2Jun 7, 2011

Method for improved thickness repeatability of PECVD deposited carbon films

NOVELLUS SYSTEMS INC26 citations89
US7923376B1Apr 12, 2011

Method of reducing defects in PECVD TEOS films

NOVELLUS SYSTEMS INC22 citations86
US10741458B2Aug 11, 2020

Methods for depositing films on sensitive substrates

NOVELLUS SYSTEMS INC9 citations84
US8362571B1Jan 29, 2013

High compressive stress carbon liners for MOS devices

NOVELLUS SYSTEMS INC5 citations84
US9240320B1Jan 19, 2016

Methods of depositing smooth and conformal ashable hard mask films

NOVELLUS SYSTEMS INC15 citations82
US8962101B2Feb 24, 2015

Methods and apparatus for plasma-based deposition

NOVELLUS SYSTEMS INC7 citations79

LAM RES CORP

14 patents
US9875891B2Jan 23, 2018

Selective inhibition in atomic layer deposition of silicon-containing films

LAM RES CORP478 citations99
US9564312B2Feb 7, 2017

Selective inhibition in atomic layer deposition of silicon-containing films

LAM RES CORP415 citations99
US10347547B2Jul 9, 2019

Suppressing interfacial reactions by varying the wafer temperature throughout deposition

LAM RES CORP401 citations98
US9824884B1Nov 21, 2017

Method for depositing metals free ald silicon nitride films using halide-based precursors

LAM RES CORP348 citations98
US9601693B1Mar 21, 2017

Method for encapsulating a chalcogenide material

LAM RES CORP43 citations98
US9214333B1Dec 15, 2015

Methods and apparatuses for uniform reduction of the in-feature wet etch rate of a silicon nitride film formed by ALD

LAM RES CORP539 citations98
US9502238B2Nov 22, 2016

Deposition of conformal films by atomic layer deposition and atomic layer etch

LAM RES CORP55 citations97
US9076646B2Jul 7, 2015

Plasma enhanced atomic layer deposition with pulsed plasma exposure

LAM RES CORP81 citations95
US9589790B2Mar 7, 2017

Method of depositing ammonia free and chlorine free conformal silicon nitride film

LAM RES CORP22 citations94
US9385318B1Jul 5, 2016

Method to integrate a halide-containing ALD film on sensitive materials

LAM RES CORP50 citations94
US10804099B2Oct 13, 2020

Selective inhibition in atomic layer deposition of silicon-containing films

LAM RES CORP13 citations86
US10643846B2May 5, 2020

Selective growth of metal-containing hardmask thin films

LAM RES CORP5 citations83
US10566194B2Feb 18, 2020

Selective deposition of etch-stop layer for enhanced patterning

LAM RES CORP5 citations82
US11107683B2Aug 31, 2021

Selective growth of metal-containing hardmask thin films

LAM RES CORP2 citations72

LAVOIE ADRIEN

2 patents

SUBRAMONIUM PRAMOD

2 patents

SWAMINATHAN SHANKAR

1 patent

FANG ZHIYUAN

1 patent

HAUSMANN DENNIS

1 patent

APPLIED MATERIALS INC

1 patent

YU YONGSIK

1 patent

HENRI JON

1 patent

BARTLETT CHRISTOPHER M

1 patent

NOVELIUS SYSTEMS INC

1 patent

Showing the top 50 of 57 patents by PatentIndex Score.