Inventor
WU YUNG-HSIEN
TW17 patents
⚠️ This page may combine multiple inventors who share the name “WU YUNG-HSIEN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
PROMOS TECHNOLOGIES INC
9 patentsUS7112505B2Sep 26, 2006
Method of selectively etching HSG layer in deep trench capacitor fabrication
PROMOS TECHNOLOGIES INC12 citations83
US7033956B1Apr 25, 2006
Semiconductor memory devices and methods for making the same
PROMOS TECHNOLOGIES INC12 citations83
US7015091B1Mar 21, 2006
Integration of silicon carbide into DRAM cell to improve retention characteristics
PROMOS TECHNOLOGIES INC17 citations83
US6872621B1Mar 29, 2005
Method for removal of hemispherical grained silicon in a deep trench
PROMOS TECHNOLOGIES INC8 citations73
US7030441B2Apr 18, 2006
Capacitor dielectric structure of a DRAM cell and method for forming thereof
PROMOS TECHNOLOGIES INC8 citations72
US6872664B2Mar 29, 2005
Dual gate nitride process
PROMOS TECHNOLOGIES INC4 citations62
US6569731B1May 27, 2003
Method of forming a capacitor dielectric structure
PROMOS TECHNOLOGIES INC4 citations61
US6764962B2Jul 20, 2004
Method for forming an oxynitride layer
PROMOS TECHNOLOGIES INC3 citations60
US6835630B2Dec 28, 2004
Capacitor dielectric structure of a DRAM cell and method for forming thereof
PROMOS TECHNOLOGIES INC1 citations51
TAIWAN SEMICONDUCTOR MFG CO LTD
7 patentsUS9673340B1Jun 6, 2017
Semiconductor device structure
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations71
US10008494B2Jun 26, 2018
Semiconductor component and method for fabricating the same
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations70
US9570568B2Feb 14, 2017
Semiconductor component and method for fabricating the same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations70
US10930583B2Feb 23, 2021
Capacitor embedded with nanocrystals
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations57
US10163516B2Dec 25, 2018
Semiconductor device structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations50
US10319675B2Jun 11, 2019
Capacitor embedded with nanocrystals
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations46
US10068984B2Sep 4, 2018
Method of manufacturing high-k dielectric using HfO/Ti/Hfo layers
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations40