P

Inventor

SAIDA SHIGEHIKO

JP25 patents

Patents

25 patents
US6333547B1Dec 25, 2001

Semiconductor device and method of manufacturing the same

TOSHIBA KK110 citations99
US6284583B1Sep 4, 2001

Semiconductor device and method of manufacturing the same

TOSHIBA KK60 citations96
US5869858AFeb 9, 1999

Semiconductor device for reducing variations in characteristics of the device

TOSHIBA KK55 citations96
US7372113B2May 13, 2008

Semiconductor device and method of manufacturing the same

TOSHIBA KK31 citations93
US7081386B2Jul 25, 2006

Semiconductor device and method of manufactuing the same

TOSHIBA KK17 citations93
US6903422B2Jun 7, 2005

Semiconductor integrated circuits, fabrication method for the same and semiconductor integrated circuit systems

TOSHIBA KK38 citations93
US6774462B2Aug 10, 2004

Semiconductor device comprising dual silicon nitride layers with varying nitrogen ratio

TOSHIBA KK39 citations93
US6326658B1Dec 4, 2001

Semiconductor device including an interface layer containing chlorine

TOSHIBA KK52 citations93
US6790723B2Sep 14, 2004

Semiconductor device and method of manufacturing the same

TOSHIBA KK22 citations92
US5949102ASep 7, 1999

Semiconductor device having a gate electrode with only two crystal grains

TOSHIBA KK37 citations92
US5866930AFeb 2, 1999

Semiconductor device and method of manufacturing the same

TOSHIBA KK49 citations92
US6794713B2Sep 21, 2004

Semiconductor device and method of manufacturing the same including a dual layer raised source and drain

TOSHIBA KK14 citations84
US6146938ANov 14, 2000

Method of fabricating semiconductor device

TOSHIBA KK18 citations84
US7129132B2Oct 31, 2006

Semiconductor device and method of manufacturing the same

TOSHIBA KK3 citations74
US7098115B2Aug 29, 2006

Semiconductor device and method of manufacturing the same

TOSHIBA KK7 citations74
US7060555B2Jun 13, 2006

Semiconductor device and method of manufacturing the same

TOSHIBA KK5 citations74
US6713359B1Mar 30, 2004

Semiconductor device and method of manufacturing the same including raised source/drain comprising SiGe or SiC

TOSHIBA KK12 citations74
US6772045B2Aug 3, 2004

System for determining dry cleaning timing, method for determining dry cleaning timing, dry cleaning method, and method for manufacturing semiconductor device

TOSHIBA KK8 citations73
US7148158B2Dec 12, 2006

Semiconductor device and method for manufacturing the same

TOSHIBA KK4 citations63
US6538271B2Mar 25, 2003

Semiconductor device and method of manufacturing the same

TOSHIBA KK3 citations63
USRE46122EAug 23, 2016

Semiconductor device and method of manufacturing the same

TOSHIBA KK0 citations52
US7612401B2Nov 3, 2009

Non-volatile memory cell

TOSHIBA KK0 citations52
US7541233B2Jun 2, 2009

Semiconductor device and method of manufacturing the same

TOSHIBA KK0 citations52
US6992020B2Jan 31, 2006

Method of fabricating semiconductor device

TOSHIBA KK0 citations52
US6841850B2Jan 11, 2005

Semiconductor device having silicon nitride film and silicon oxide film, and method of fabricating the same

TOSHIBA KK1 citations52