Inventor

MOWRY ANTHONY

DE19 patents

⚠️ This page may combine multiple inventors who share the name “MOWRY ANTHONY”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

MOWRY ANTHONY

GLOBALFOUNDRIES INC

Reduction of memory instability by local adaptation of re-crystallization conditions in a cache area of a semiconductor device

Semiconductor device having a strained semiconductor alloy concentration profile

Temperature monitoring in a semiconductor device by thermocouples distributed in the contact structure

Method for selectively forming strain in a transistor by a stress memorization technique without adding additional lithography steps

Blocking pre-amorphization of a gate electrode of a transistor

Method for creating tensile strain by repeatedly applied stress memorization techniques

Increasing stress transfer efficiency in a transistor by reducing spacer width during the drain/source implantation sequence

Dopant profile tuning for MOS devices by adapting a spacer width prior to implantation

Method of forming an interlayer dielectric material having different removal rates during CMP

MOWRY ANTHONY

Test structure for monitoring process characteristics for forming embedded semiconductor alloys in drain/source regions

Cold temperature control in a semiconductor device

In situ formed drain and source regions in a silicon/germanium containing transistor device

Test structure for monitoring process characteristics for forming embedded semiconductor alloys in drain/source regions

Heat dissipation in temperature critical device areas of semiconductor devices by heat pipes connecting to the substrate backside

Dopant profile tuning for MOS devices by adapting a spacer width prior to implantation

ADVANCED MICRO DEVICES INC

Test structure for monitoring process characteristics for forming embedded semiconductor alloys in drain/source regions

Method of forming a semiconductor structure comprising a field effect transistor having a stressed channel region

STEPHAN ROLF

Temperature monitoring in a semiconductor device by using a PN junction based on silicon/germanium materials

GEHRING ANDREAS

Method for creating tensile strain by applying stress memorization techniques at close proximity to the gate electrode