Inventor
SHINYA NAOFUMI
JP15 patents
⚠️ This page may combine multiple inventors who share the name “SHINYA NAOFUMI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SHINETSU CHEMICAL CO
13 patentsUS6284066B1Sep 4, 2001
Process for producing hydrogen absorbing alloy powder and hydrogen absorbing alloy electrode
SHINETSU CHEMICAL CO6 citations73
US6106769AAug 22, 2000
Hydrogen storage alloy composition and electrode using said alloy composition
SHINETSU CHEMICAL CO11 citations73
US8697284B2Apr 15, 2014
Negative electrode material for lithium ion batteries
SHINETSU CHEMICAL CO5 citations72
US10612154B2Apr 7, 2020
Method for preparing SiC single crystal
SHINETSU CHEMICAL CO2 citations71
US9951439B2Apr 24, 2018
Method for growing silicon carbide crystal
SHINETSU CHEMICAL CO2 citations71
US9945047B2Apr 17, 2018
Method for growing silicon carbide crystal
SHINETSU CHEMICAL CO3 citations71
US11440849B2Sep 13, 2022
SiC crucible, SiC sintered body, and method of producing SiC single crystal
SHINETSU CHEMICAL CO1 citations61
US6733724B1May 11, 2004
Hydrogen absorbing alloy and nickel-metal hydride rechargeable battery
SHINETSU CHEMICAL CO3 citations61
US6063524AMay 16, 2000
Hydrogen absorbing alloy for a negative electrode of an alkaline storage battery
SHINETSU CHEMICAL CO5 citations61
US5910379AJun 8, 1999
Hydrogen absorbing alloy for a negative electrode of an alkaline storage battery
SHINETSU CHEMICAL CO5 citations61
US7749559B2Jul 6, 2010
Method for manufacturing a surface-treated silicon substrate for magnetic recording medium
SHINETSU CHEMICAL CO0 citations51
US12247318B2Mar 11, 2025
Method for producing SiC single crystal and method for suppressing dislocations in SiC single crystal
SHINETSU CHEMICAL CO0 citations50
US7476454B2Jan 13, 2009
Substrate for magnetic recording medium
SHINETSU CHEMICAL CO0 citations50