Inventor

CHEN DING-YUAN

TW52 patents

⚠️ This page may combine multiple inventors who share the name “CHEN DING-YUAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

CHEN DING-YUAN

YU CHEN-HUA

Light-emitting diodes on concave texture substrate

Light-emitting diodes on concave texture substrate

Light-emitting diode with textured substrate

Patterned substrate for hetero-epitaxial growth of group-III nitride film

Light-emitting diode with textured substrate

Stress-alleviation layer for LED structures

Realizing N-face III-nitride semiconductors by nitridation treatment

Method of fabricating semiconductor device isolation structure

Method of fabricating semiconductor device isolation structure

III-V compound semiconductor epitaxy using lateral overgrowth

Patterned substrate for hetero-epitaxial growth of group-III nitride film

LED device with embedded top electrode

Group-III nitride for reducing stress caused by metal nitride reflector

Carbon-containing semiconductor substrate

CHEN DING-YUAN

Light-emitting diode integration scheme

Reflective layer between light-emitting diodes

Light-emitting diode integration scheme

Group-III nitride epitaxial layer on silicon substrate

Method of separating light-emitting diode from a growth substrate

Omnidirectional reflector

CMOS devices having dual high-mobility channels

Light-emitting diode on a conductive substrate

Light-emitting diode with embedded elements

Light-emitting diode with non-metallic reflector

Method of separating light-emitting diode from a growth substrate

Light-emitting diode with current-spreading region

TAIWAN SEMICONDUCTOR MFG

CMOS devices having dual high-mobility channels

III-V compound semiconductor epitaxy from a non-III-V substrate

III-nitride based semiconductor structure with multiple conductive tunneling layer

Group-III nitride epitaxial layer on silicon substrate

Realizing N-face III-nitride semiconductors by nitridation treatment

III-V compound semiconductor epitaxy from a non-III-V substrate

Light-emitting diode with current-spreading region

III-V compound semiconductor epitaxy from a non-III-V substrate

TSMC SOLID STATE LIGHTING LTD

Omnidirectional reflector

Method of forming light-generating device including reflective layer

Light-emitting diode with textured substrate

Semiconductor package with through silicon vias

Omnidirectional reflector

TAIWAN SEMICONDUCTOR MFG CO LTD

Method of fabricating semiconductor device isolation structure

Method of fabricating semiconductor device isolation structure

CMOS devices having dual high-mobility channels

EPISTAR CORP

Light-emitting diodes on concave texture substrate

Light-emitting device

Light-emitting device including reflective layer

CHANG CHENG-HUNG

Method of fabrication of a FinFET element

LEE WEN-CHIN

Forming chalcogenide semiconductor absorbers

HC PHOTONICS CORP

Compact optical and laser systems and ultrafast laser utilizing the same

YU CHIA-LIN

III-nitride based semiconductor structure with multiple conductive tunneling layer

PHISON ELECTRONICS CORP

Memory control method, memory storage device and memory control circuit unit