Inventor
DAI PIN-REN
TW49 patents
Patents
49 patentsUS10644231B2May 5, 2020
Memory device and fabrication method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD22 citations94
US10276794B1Apr 30, 2019
Memory device and fabrication method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD18 citations94
US10937652B1Mar 2, 2021
Method and structure of cut end with self-aligned double patterning
TAIWAN SEMICONDUCTOR MFG CO LTD11 citations86
US10636963B2Apr 28, 2020
Magnetic tunnel junctions
TAIWAN SEMICONDUCTOR MFG CO LTD7 citations84
US10355198B2Jul 16, 2019
Memory device and fabrication method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD8 citations84
US10270028B1Apr 23, 2019
Memory device and method for manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD7 citations84
US12127489B2Oct 22, 2024
Integrated circuit structure
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11848207B2Dec 19, 2023
Method and structure of cut end with self-aligned double patterning
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11683988B2Jun 20, 2023
Semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11189658B2Nov 30, 2021
Magnetic random access memory and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US11171052B2Nov 9, 2021
Methods of forming interconnect structures with selectively deposited pillars and structures formed thereby
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11171284B2Nov 9, 2021
Memory device
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US11158518B2Oct 26, 2021
Methods of etching metals in semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10985312B2Apr 20, 2021
Methods of fabricating magneto-resistive random-access memory (MRAM) devices with self-aligned top electrode via and structures formed thereby
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10971682B2Apr 6, 2021
Method for fabricating memory device
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10741417B2Aug 11, 2020
Method for forming interconnect structure
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10700264B2Jun 30, 2020
Memory device and fabrication method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US12464954B2Nov 4, 2025
Magneto-resistive random-access memory (MRAM) devices with self-aligned top electrode via
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12368046B2Jul 22, 2025
Method and structure of cut end with self-aligned double patterning
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12354881B2Jul 8, 2025
Methods of etching metals in semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12310255B2May 20, 2025
Structure and method for an MRAM device with a multi-layer top electrode
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12302761B2May 13, 2025
Magnetic tunnel junction devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12074059B2Aug 27, 2024
Semiconductor arrangement and method of making
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11915943B2Feb 27, 2024
Methods of etching metals in semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11856866B2Dec 26, 2023
Magnetic tunnel junction devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11854836B2Dec 26, 2023
Semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11849645B2Dec 19, 2023
Integrated circuit
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11776845B2Oct 3, 2023
Semiconductor arrangement and method of making
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11723282B2Aug 8, 2023
Magneto-resistive random-access memory (MRAM) devices with self-aligned top electrode via
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11569096B2Jan 31, 2023
Semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11563167B2Jan 24, 2023
Structure and method for an MRAM device with a multi-layer top electrode
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11355701B2Jun 7, 2022
Integrated circuit
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11329216B2May 10, 2022
Magnetic tunnel junction devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11189524B2Nov 30, 2021
Semiconductor arrangement and method of making
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11031284B2Jun 8, 2021
Semiconductor device and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations63
US11024533B2Jun 1, 2021
Methods of forming interconnect structures using via holes filled with dielectric film
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11018027B2May 25, 2021
Interconnect structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US10964888B2Mar 30, 2021
Magnetic tunnel junctions
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US10685869B2Jun 16, 2020
Semiconductor device and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations63
US12219880B2Feb 4, 2025
Integrated circuit device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12069958B2Aug 20, 2024
Semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11588107B2Feb 21, 2023
Integrated circuit structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11063217B2Jul 13, 2021
Semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11139236B2Oct 5, 2021
Semiconductor devices and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10879458B2Dec 29, 2020
Memory device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10879455B2Dec 29, 2020
Methods of fabricating magneto-resistive random-access memory (MRAM) devices to avoid damaging magnetic tunnel junction (MTJ) structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10756258B2Aug 25, 2020
Memory device and fabrication method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10734580B2Aug 4, 2020
Memory device and fabrication method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10622551B2Apr 14, 2020
Manufacturing techniques and devices for magnetic tunnel junction devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52