P

Inventor

CHAN CHIEN-TAI

TW42 patents
⚠️ This page may combine multiple inventors who share the name “CHAN CHIEN-TAI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TAIWAN SEMICONDUCTOR MFG CO LTD

26 patents
US9508556B1Nov 29, 2016

Method for fabricating fin field effect transistor and semiconductor device

TAIWAN SEMICONDUCTOR MFG CO LTD31 citations94
US9129988B1Sep 8, 2015

FinFET and method of manufacturing the same

TAIWAN SEMICONDUCTOR MFG CO LTD17 citations92
US10153344B2Dec 11, 2018

Formation of dislocations in source and drain regions of FinFET devices

TAIWAN SEMICONDUCTOR MFG CO LTD9 citations84
US9768256B2Sep 19, 2017

Formation of dislocations in source and drain regions of FinFET devices

TAIWAN SEMICONDUCTOR MFG CO LTD10 citations84
US9722081B1Aug 1, 2017

FinFET device and method of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations84
US11195931B2Dec 7, 2021

Gate structure, semiconductor device and the method of forming semiconductor device

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10276715B2Apr 30, 2019

Fin field effect transistor and method for fabricating the same

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10224245B2Mar 5, 2019

Method of making a finFET, and finFET formed by the method

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US9537010B2Jan 3, 2017

Semiconductor device structure and method for forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US9343575B1May 17, 2016

FinFET and method of manufacturing the same

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US9659776B2May 23, 2017

Doping for FinFET

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US12087847B2Sep 10, 2024

Variable size fin structures

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11380782B2Jul 5, 2022

Variable size fin structures

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11227951B2Jan 18, 2022

Method of forming semiconductor device

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11211455B2Dec 28, 2021

Formation of dislocations in source and drain regions of FinFET devices

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US9224737B2Dec 29, 2015

Dual epitaxial process for a finFET device

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations63
US11935954B2Mar 19, 2024

Semiconductor device structure and method for forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12283610B2Apr 22, 2025

Structure and formation method of semiconductor device with epitaxial structures

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US10749008B2Aug 18, 2020

Gate structure, semiconductor device and the method of forming semiconductor device

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10741642B2Aug 11, 2020

Formation of dislocations in source and drain regions of finFET devices

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10665717B2May 26, 2020

Semiconductor device and FinFET device

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10141417B2Nov 27, 2018

Gate structure, semiconductor device and the method of forming semiconductor device

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10062780B2Aug 28, 2018

FinFET device

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9865732B2Jan 9, 2018

Integrated circuits and methods of forming integrated circuits

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10504898B2Dec 10, 2019

Fin field-effect transistor structure and method for forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10515856B2Dec 24, 2019

Method of making a FinFET, and FinFET formed by the method

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations47

TAIWAN SEMICONDUCTOR MFG

9 patents

TSAI CHUN HSIUNG

2 patents

TSENG CHIH-HUNG

1 patent

LEE TUNG YING

1 patent

CHEN HUNG-KAI

1 patent

LIN CHIA-PIN

1 patent

Yu de-wei

1 patent