Inventor
CHAN CHIEN-TAI
TW42 patents
⚠️ This page may combine multiple inventors who share the name “CHAN CHIEN-TAI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
26 patentsUS9508556B1Nov 29, 2016
Method for fabricating fin field effect transistor and semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD31 citations94
US9129988B1Sep 8, 2015
FinFET and method of manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD17 citations92
US10153344B2Dec 11, 2018
Formation of dislocations in source and drain regions of FinFET devices
TAIWAN SEMICONDUCTOR MFG CO LTD9 citations84
US9768256B2Sep 19, 2017
Formation of dislocations in source and drain regions of FinFET devices
TAIWAN SEMICONDUCTOR MFG CO LTD10 citations84
US9722081B1Aug 1, 2017
FinFET device and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations84
US11195931B2Dec 7, 2021
Gate structure, semiconductor device and the method of forming semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10276715B2Apr 30, 2019
Fin field effect transistor and method for fabricating the same
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10224245B2Mar 5, 2019
Method of making a finFET, and finFET formed by the method
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US9537010B2Jan 3, 2017
Semiconductor device structure and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US9343575B1May 17, 2016
FinFET and method of manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US9659776B2May 23, 2017
Doping for FinFET
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US12087847B2Sep 10, 2024
Variable size fin structures
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11380782B2Jul 5, 2022
Variable size fin structures
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11227951B2Jan 18, 2022
Method of forming semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11211455B2Dec 28, 2021
Formation of dislocations in source and drain regions of FinFET devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US9224737B2Dec 29, 2015
Dual epitaxial process for a finFET device
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations63
US11935954B2Mar 19, 2024
Semiconductor device structure and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12283610B2Apr 22, 2025
Structure and formation method of semiconductor device with epitaxial structures
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US10749008B2Aug 18, 2020
Gate structure, semiconductor device and the method of forming semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10741642B2Aug 11, 2020
Formation of dislocations in source and drain regions of finFET devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10665717B2May 26, 2020
Semiconductor device and FinFET device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10141417B2Nov 27, 2018
Gate structure, semiconductor device and the method of forming semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10062780B2Aug 28, 2018
FinFET device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9865732B2Jan 9, 2018
Integrated circuits and methods of forming integrated circuits
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10504898B2Dec 10, 2019
Fin field-effect transistor structure and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10515856B2Dec 24, 2019
Method of making a FinFET, and FinFET formed by the method
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations47
TAIWAN SEMICONDUCTOR MFG
9 patentsUS9293534B2Mar 22, 2016
Formation of dislocations in source and drain regions of FinFET devices
TAIWAN SEMICONDUCTOR MFG27 citations94
US9373704B2Jun 21, 2016
Multiple-gate semiconductor device and method
TAIWAN SEMICONDUCTOR MFG6 citations84
US8895383B2Nov 25, 2014
Multiple-gate semiconductor device and method
TAIWAN SEMICONDUCTOR MFG7 citations84
US8357579B2Jan 22, 2013
Methods of forming integrated circuits
TAIWAN SEMICONDUCTOR MFG8 citations84
US9362404B2Jun 7, 2016
Doping for FinFET
TAIWAN SEMICONDUCTOR MFG8 citations83
US8703593B2Apr 22, 2014
Techniques for FinFET doping
TAIWAN SEMICONDUCTOR MFG6 citations83
US9379208B2Jun 28, 2016
Integrated circuits and methods of forming integrated circuits
TAIWAN SEMICONDUCTOR MFG2 citations63
US8951875B2Feb 10, 2015
Semiconductor structure
TAIWAN SEMICONDUCTOR MFG0 citations52
US7994016B2Aug 9, 2011
Method for obtaining quality ultra-shallow doped regions and device having same
TAIWAN SEMICONDUCTOR MFG1 citations52