P

Inventor

AHN YANG-LO

KR6 patents
⚠️ This page may combine multiple inventors who share the name “AHN YANG-LO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

3 patents
US9208886B2Dec 8, 2015

Memory system and driving method thereof

SAMSUNG ELECTRONICS CO LTD9 citations82
US9659660B2May 23, 2017

Memory system and driving method thereof using at least two zone voltages

SAMSUNG ELECTRONICS CO LTD4 citations71
US9378828B2Jun 28, 2016

Memory system and driving method thereof

SAMSUNG ELECTRONICS CO LTD4 citations71

KIM MINSU

1 patent
US9196364B2Nov 24, 2015

Nonvolatile memory device having split ground selection line structures

KIM MINSU9 citations82

PARK ILHAN

1 patent
US9406393B2Aug 2, 2016

Nonvolatile memory devices and program verification methods using one verification voltage to verify memory cells having different target states

PARK ILHAN11 citations78

AHN YANG-LO

1 patent
US9183943B2Nov 10, 2015

Nonvolatile memory device and control method thereof

AHN YANG-LO8 citations78