Inventor
CORVASCE CHIARA
CH20 patents
⚠️ This page may combine multiple inventors who share the name “CORVASCE CHIARA”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
ABB SCHWEIZ AG
6 patentsUS10109725B2Oct 23, 2018
Reverse-conducting semiconductor device
ABB SCHWEIZ AG5 citations72
US9859360B2Jan 2, 2018
Edge termination for semiconductor devices and corresponding fabrication method
ABB SCHWEIZ AG2 citations70
US10629714B2Apr 21, 2020
Insulated gate bipolar transistor
ABB SCHWEIZ AG0 citations40
US9553086B2Jan 24, 2017
Reverse-conducting semiconductor device
ABB SCHWEIZ AG0 citations40
US10128361B2Nov 13, 2018
Insulated gate power semiconductor device and method for manufacturing such a device
ABB SCHWEIZ AG0 citations38
US10141196B2Nov 27, 2018
Power semiconductor device with thick top-metal-design and method for manufacturing such power semiconductor device
ABB SCHWEIZ AG0 citations37
ST MICROELECTRONICS SRL
5 patentsUS6300654B1Oct 9, 2001
Structure of a stacked memory cell, in particular a ferroelectric cell
ST MICROELECTRONICS SRL32 citations92
US6656801B2Dec 2, 2003
Method of fabricating a ferroelectric stacked memory cell
ST MICROELECTRONICS SRL5 citations62
US6366488B1Apr 2, 2002
Ferroelectric non-volatile memory cell integrated in a semiconductor substrate
ST MICROELECTRONICS SRL6 citations62
US7052985B2May 30, 2006
Contact structure for an integrated semiconductor device
ST MICROELECTRONICS SRL1 citations49
US6734565B2May 11, 2004
Contact structure for an integrated semiconductor device
ST MICROELECTRONICS SRL1 citations49
ABB TECHNOLOGY AG
4 patentsUS9825158B2Nov 21, 2017
Insulated gate bipolar transistor
ABB TECHNOLOGY AG6 citations72
US9105680B2Aug 11, 2015
Insulated gate bipolar transistor
ABB TECHNOLOGY AG5 citations72
US9099520B2Aug 4, 2015
Insulated gate bipolar transistor
ABB TECHNOLOGY AG4 citations72
US9153676B2Oct 6, 2015
Insulated gate bipolar transistor
ABB TECHNOLOGY AG0 citations51
HITACHI ENERGY LTD
3 patentsUS12068312B2Aug 20, 2024
Reverse conducting insulated gate power semiconductor device having low conduction losses
HITACHI ENERGY LTD0 citations48
US12432950B2Sep 30, 2025
Insulated gate bipolar transistor including trench Schottky electrode
HITACHI ENERGY LTD0 citations45
US12199144B2Jan 14, 2025
Power semiconductor device and manufacturiing method
HITACHI ENERGY LTD0 citations44
ABB POWER GRIDS SWITZERLAND AG
2 patentsUS11189688B2Nov 30, 2021
Insulated gate power semiconductor device and method for manufacturing such device
ABB POWER GRIDS SWITZERLAND AG1 citations60
US11075285B2Jul 27, 2021
Insulated gate power semiconductor device and method for manufacturing such a device
ABB POWER GRIDS SWITZERLAND AG0 citations49