Inventor
KOPTA ARNOST
CH21 patents
⚠️ This page may combine multiple inventors who share the name “KOPTA ARNOST”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
ABB TECHNOLOGY AG
7 patentsUS9064925B2Jun 23, 2015
Power semiconductor device
ABB TECHNOLOGY AG7 citations82
US9105680B2Aug 11, 2015
Insulated gate bipolar transistor
ABB TECHNOLOGY AG5 citations72
US9099520B2Aug 4, 2015
Insulated gate bipolar transistor
ABB TECHNOLOGY AG4 citations72
US9324708B2Apr 26, 2016
Power semiconductor device
ABB TECHNOLOGY AG1 citations51
US9153676B2Oct 6, 2015
Insulated gate bipolar transistor
ABB TECHNOLOGY AG0 citations51
US9006041B2Apr 14, 2015
Bipolar punch-through semiconductor device and method for manufacturing such a semiconductor device
ABB TECHNOLOGY AG1 citations51
US8384186B2Feb 26, 2013
Power semiconductor device with new guard ring termination design and method for producing same
ABB TECHNOLOGY AG0 citations37
RAHIMO MUNAF
5 patentsUS8450777B2May 28, 2013
Method for manufacturing a reverse-conducting insulated gate bipolar transistor
RAHIMO MUNAF3 citations61
US8508016B2Aug 13, 2013
Bipolar punch-through semiconductor device and method for manufacturing such a semiconductor device
RAHIMO MUNAF2 citations60
US8450793B2May 28, 2013
Semiconductor module
RAHIMO MUNAF3 citations60
US8501586B2Aug 6, 2013
Power semiconductor
RAHIMO MUNAF0 citations40
US8829571B2Sep 9, 2014
Punch-through semiconductor device and method for producing same
RAHIMO MUNAF0 citations39
ABB SCHWEIZ AG
3 patentsUS10109725B2Oct 23, 2018
Reverse-conducting semiconductor device
ABB SCHWEIZ AG5 citations72
US10629714B2Apr 21, 2020
Insulated gate bipolar transistor
ABB SCHWEIZ AG0 citations40
US10141196B2Nov 27, 2018
Power semiconductor device with thick top-metal-design and method for manufacturing such power semiconductor device
ABB SCHWEIZ AG0 citations37
KOPTA ARNOST
3 patentsUS8461622B2Jun 11, 2013
Reverse-conducting semiconductor device
KOPTA ARNOST1 citations48
US8324062B2Dec 4, 2012
Method for manufacturing a power semiconductor device
KOPTA ARNOST0 citations38
US9048340B2Jun 2, 2015
Power semiconductor device with a reduced dynamic avalanche effect and subsequent local heating
KOPTA ARNOST0 citations37