Inventor
PARK MU-HUI
KR24 patents
⚠️ This page may combine multiple inventors who share the name “PARK MU-HUI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
22 patentsUS7349245B2Mar 25, 2008
Non-volatile phase-change memory device and associated program-suspend-read operation
SAMSUNG ELECTRONICS CO LTD55 citations98
US7656719B2Feb 2, 2010
Phase change memory device generating program current and method thereof
SAMSUNG ELECTRONICS CO LTD14 citations92
US7548467B2Jun 16, 2009
Bias voltage generator and method generating bias voltage for semiconductor memory device
SAMSUNG ELECTRONICS CO LTD14 citations84
US9805807B2Oct 31, 2017
Operation method operating nonvolatile memory device having plurality of memory blocks
SAMSUNG ELECTRONICS CO LTD8 citations83
US9627056B2Apr 18, 2017
Resistive memory device and memory system including resistive memory device
SAMSUNG ELECTRONICS CO LTD2 citations73
US10102897B2Oct 16, 2018
Memory device and method of operating the same
SAMSUNG ELECTRONICS CO LTD6 citations72
US10083746B2Sep 25, 2018
Memory device and method for operating memory device
SAMSUNG ELECTRONICS CO LTD3 citations72
US9728254B2Aug 8, 2017
Nonvolatile memory device and method for sensing the same
SAMSUNG ELECTRONICS CO LTD2 citations72
US9478302B2Oct 25, 2016
Nonvolatile memory device and method for sensing the same
SAMSUNG ELECTRONICS CO LTD3 citations72
US9368201B2Jun 14, 2016
Nonvolatile memory device having resistive memory cell and method sensing data in same
SAMSUNG ELECTRONICS CO LTD3 citations72
US9058874B2Jun 16, 2015
Sensing circuits and phase change memory devices including the same
SAMSUNG ELECTRONICS CO LTD5 citations71
US7986551B2Jul 26, 2011
Phase change random access memory device
SAMSUNG ELECTRONICS CO LTD4 citations63
US7672156B2Mar 2, 2010
Phase change random access memory device
SAMSUNG ELECTRONICS CO LTD2 citations63
US7639558B2Dec 29, 2009
Phase change random access memory (PRAM) device
SAMSUNG ELECTRONICS CO LTD3 citations63
US11948631B2Apr 2, 2024
Memory device and operating method thereof
SAMSUNG ELECTRONICS CO LTD0 citations62
US11056187B2Jul 6, 2021
Memory device with read-write-read memory controller
SAMSUNG ELECTRONICS CO LTD0 citations62
US10546637B2Jan 28, 2020
Method of operating resistive memory device reducing read disturbance
SAMSUNG ELECTRONICS CO LTD1 citations62
US10388699B2Aug 20, 2019
Three-dimensional semiconductor memory devices
SAMSUNG ELECTRONICS CO LTD1 citations60
US7936612B2May 3, 2011
Phase change memory device generating program current and method thereof
SAMSUNG ELECTRONICS CO LTD0 citations52
US10770138B2Sep 8, 2020
Method of operating resistive memory device reducing read disturbance
SAMSUNG ELECTRONICS CO LTD0 citations51
US9361977B2Jun 7, 2016
Reliable read operation for nonvolatile memory device with resistance material that reads data based on reference current
SAMSUNG ELECTRONICS CO LTD0 citations51
US10784311B2Sep 22, 2020
Three-dimensional semiconductor memory devices
SAMSUNG ELECTRONICS CO LTD0 citations49