Inventor · disambiguated record
Jeonghyun Hwang
Also filed as: HWANG JEONGHYUN
21 granted patents·50 citations·filing 2001–2024
92Inventor score
Top patents by PatentIndex Score
21 records- 0192US11469225B2Device integration schemes leveraging a bulk semiconductor substrate having a <111 > crystal orientationGLOBALFOUNDRIES US INC·Filed 2020·Granted Oct 11, 2022·2 cites·20 claims
- 0283US6888170B2Highly doped III-nitride semiconductorsCORNELL RES FOUNDATION INC·Filed 2002·Granted May 3, 2005·24 cites·23 claims
- 0382US12419098B2Device integration schemes leveraging a bulk semiconductor substrate having a <111> crystal orientationGLOBALFOUNDRIES US INC·Filed 2024·Granted Sep 16, 2025·0 cites·20 claims
- 0480US7485901B2Highly doped III-nitride semiconductorsCORNELL RES FOUNDATION INC·Filed 2005·Granted Feb 3, 2009·6 cites·17 claims
- 0575US12087764B2Device integration schemes leveraging a bulk semiconductor substrate having a <111> crystal orientationGLOBALFOUNDRIES US INC·Filed 2022·Granted Sep 10, 2024·0 cites·20 claims
- 0675US12002878B2Implanted isolation for device integration on a common substrateGLOBALFOUNDRIES US INC·Filed 2022·Granted Jun 4, 2024·0 cites·20 claims
- 0772US7482191B2Highly doped III-nitride semiconductorsCORNELL RES FOUNDATION INC·Filed 2005·Granted Jan 27, 2009·3 cites·5 claims
- 0870US11616127B2Symmetric arrangement of field plates in semiconductor devicesGLOBALFOUNDRIES US INC·Filed 2022·Granted Mar 28, 2023·0 cites·20 claims
- 0970US6953740B2Highly doped III-nitride semiconductorsCORNELL RES FOUNDATION INC·Filed 2002·Granted Oct 11, 2005·12 cites·10 claims
- 1069US12119383B2Transistor with multi-level self-aligned gate and source/drain terminals and methodsGLOBALFOUNDRIES US INC·Filed 2023·Granted Oct 15, 2024·0 cites·15 claims
- 1168US11569374B2Implanted isolation for device integration on a common substrateGLOBALFOUNDRIES US INC·Filed 2020·Granted Jan 31, 2023·0 cites·17 claims
- 1265US11710655B2Integrated circuit structure with semiconductor-based isolation structure and methods to form sameGLOBALFOUNDRIES US INC·Filed 2021·Granted Jul 25, 2023·0 cites·7 claims
- 1365US11316019B2Symmetric arrangement of field plates in semiconductor devicesGLOBALFOUNDRIES US INC·Filed 2020·Granted Apr 26, 2022·0 cites·20 claims
- 1461US11881506B2Gate structures with air gap isolation featuresGLOBALFOUNDRIES US INC·Filed 2021·Granted Jan 23, 2024·0 cites·20 claims
- 1561US11646351B2Transistor with multi-level self-aligned gate and source/drain terminals and methodsGLOBALFOUNDRIES US INC·Filed 2021·Granted May 9, 2023·0 cites·10 claims
- 1661US11177158B2Integrated circuit structure with semiconductor-based isolation structure and methods to form sameGLOBALFOUNDRIES US INC·Filed 2020·Granted Nov 16, 2021·0 cites·14 claims
- 1757US7993938B2Highly doped III-nitride semiconductorsCORNELL RES FOUNDATION INC·Filed 2009·Granted Aug 9, 2011·0 cites·13 claims
- 1854US11916119B2Transistor with self-aligned gate and self-aligned source/drain terminal(s) and methodsGLOBALFOUNDRIES US INC·Filed 2021·Granted Feb 27, 2024·0 cites·20 claims
- 1953US12062574B2Integrated circuit structure with through-metal through-substrate interconnect and methodGLOBALFOUNDRIES US INC·Filed 2021·Granted Aug 13, 2024·0 cites·20 claims
- 2052US11177345B1Heterojunction bipolar transistorGLOBALFOUNDRIES US INC·Filed 2020·Granted Nov 16, 2021·0 cites·20 claims
- 2151US7622322B2Method of forming an AlN coated heterojunction field effect transistorCORNELL RES FOUNDATION INC·Filed 2001·Granted Nov 24, 2009·3 cites·19 claims
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