Inventor
KANTAROVSKY JOHNATAN A
US22 patents
⚠️ This page may combine multiple inventors who share the name “KANTAROVSKY JOHNATAN A”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
GLOBALFOUNDRIES US INC
20 patentsUS11380759B2Jul 5, 2022
Transistor with embedded isolation layer in bulk substrate
GLOBALFOUNDRIES US INC2 citations72
US12417975B2Sep 16, 2025
Electrically programmable fuse over crystalline semiconductor materials
GLOBALFOUNDRIES US INC0 citations62
US12046633B2Jul 23, 2024
Airgap structures in auto-doped region under one or more transistors
GLOBALFOUNDRIES US INC0 citations62
US11901304B2Feb 13, 2024
Integrated circuit structure with fluorescent material, and related methods
GLOBALFOUNDRIES US INC0 citations62
US11881506B2Jan 23, 2024
Gate structures with air gap isolation features
GLOBALFOUNDRIES US INC0 citations62
US11749717B2Sep 5, 2023
Transistor with embedded isolation layer in bulk substrate
GLOBALFOUNDRIES US INC0 citations62
US11574867B2Feb 7, 2023
Non-planar silicided semiconductor electrical fuse
GLOBALFOUNDRIES US INC0 citations62
US11437329B2Sep 6, 2022
Anti-tamper x-ray blocking package
GLOBALFOUNDRIES US INC0 citations62
US11380622B2Jul 5, 2022
Method and related structure to authenticate integrated circuit with authentication film
GLOBALFOUNDRIES US INC0 citations62
US11322497B1May 3, 2022
Electronic fuse (e-fuse) cells integrated with bipolar device
GLOBALFOUNDRIES US INC1 citations62
US12550410B2Feb 10, 2026
High electron mobility transistors
GLOBALFOUNDRIES US INC0 citations61
US12183814B1Dec 31, 2024
Multi-channel transistor
GLOBALFOUNDRIES US INC0 citations61
US12119383B2Oct 15, 2024
Transistor with multi-level self-aligned gate and source/drain terminals and methods
GLOBALFOUNDRIES US INC0 citations61
US11646351B2May 9, 2023
Transistor with multi-level self-aligned gate and source/drain terminals and methods
GLOBALFOUNDRIES US INC0 citations61
US11710655B2Jul 25, 2023
Integrated circuit structure with semiconductor-based isolation structure and methods to form same
GLOBALFOUNDRIES US INC0 citations59
US11177158B2Nov 16, 2021
Integrated circuit structure with semiconductor-based isolation structure and methods to form same
GLOBALFOUNDRIES US INC0 citations59
US11177345B1Nov 16, 2021
Heterojunction bipolar transistor
GLOBALFOUNDRIES US INC0 citations59
US11764258B2Sep 19, 2023
Airgap isolation structures
GLOBALFOUNDRIES US INC1 citations58
US12581701B2Mar 17, 2026
Device with dual isolation structure
GLOBALFOUNDRIES US INC0 citations52
US11916119B2Feb 27, 2024
Transistor with self-aligned gate and self-aligned source/drain terminal(s) and methods
GLOBALFOUNDRIES US INC0 citations49