P

Inventor

KANTAROVSKY JOHNATAN A

US22 patents
⚠️ This page may combine multiple inventors who share the name “KANTAROVSKY JOHNATAN A”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

GLOBALFOUNDRIES US INC

20 patents
US11380759B2Jul 5, 2022

Transistor with embedded isolation layer in bulk substrate

GLOBALFOUNDRIES US INC2 citations72
US12417975B2Sep 16, 2025

Electrically programmable fuse over crystalline semiconductor materials

GLOBALFOUNDRIES US INC0 citations62
US12046633B2Jul 23, 2024

Airgap structures in auto-doped region under one or more transistors

GLOBALFOUNDRIES US INC0 citations62
US11901304B2Feb 13, 2024

Integrated circuit structure with fluorescent material, and related methods

GLOBALFOUNDRIES US INC0 citations62
US11881506B2Jan 23, 2024

Gate structures with air gap isolation features

GLOBALFOUNDRIES US INC0 citations62
US11749717B2Sep 5, 2023

Transistor with embedded isolation layer in bulk substrate

GLOBALFOUNDRIES US INC0 citations62
US11574867B2Feb 7, 2023

Non-planar silicided semiconductor electrical fuse

GLOBALFOUNDRIES US INC0 citations62
US11437329B2Sep 6, 2022

Anti-tamper x-ray blocking package

GLOBALFOUNDRIES US INC0 citations62
US11380622B2Jul 5, 2022

Method and related structure to authenticate integrated circuit with authentication film

GLOBALFOUNDRIES US INC0 citations62
US11322497B1May 3, 2022

Electronic fuse (e-fuse) cells integrated with bipolar device

GLOBALFOUNDRIES US INC1 citations62
US12550410B2Feb 10, 2026

High electron mobility transistors

GLOBALFOUNDRIES US INC0 citations61
US12183814B1Dec 31, 2024

Multi-channel transistor

GLOBALFOUNDRIES US INC0 citations61
US12119383B2Oct 15, 2024

Transistor with multi-level self-aligned gate and source/drain terminals and methods

GLOBALFOUNDRIES US INC0 citations61
US11646351B2May 9, 2023

Transistor with multi-level self-aligned gate and source/drain terminals and methods

GLOBALFOUNDRIES US INC0 citations61
US11710655B2Jul 25, 2023

Integrated circuit structure with semiconductor-based isolation structure and methods to form same

GLOBALFOUNDRIES US INC0 citations59
US11177158B2Nov 16, 2021

Integrated circuit structure with semiconductor-based isolation structure and methods to form same

GLOBALFOUNDRIES US INC0 citations59
US11177345B1Nov 16, 2021

Heterojunction bipolar transistor

GLOBALFOUNDRIES US INC0 citations59
US11764258B2Sep 19, 2023

Airgap isolation structures

GLOBALFOUNDRIES US INC1 citations58
US12581701B2Mar 17, 2026

Device with dual isolation structure

GLOBALFOUNDRIES US INC0 citations52
US11916119B2Feb 27, 2024

Transistor with self-aligned gate and self-aligned source/drain terminal(s) and methods

GLOBALFOUNDRIES US INC0 citations49

GLOBALFOUNDRIES INC

1 patent

TOWER SEMICONDUCTOR LTD

1 patent