Inventor
TRAN XUAN-ANH
US24 patents
⚠️ This page may combine multiple inventors who share the name “TRAN XUAN-ANH”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
GLOBALFOUNDRIES SG PTE LTD
14 patentsUS9659943B1May 23, 2017
Programmable integrated circuits and methods of forming the same
GLOBALFOUNDRIES SG PTE LTD21 citations94
US9871076B2Jan 16, 2018
Domain wall magnetic memory
GLOBALFOUNDRIES SG PTE LTD7 citations84
US9768231B2Sep 19, 2017
High density multi-time programmable resistive memory devices and method of forming thereof
GLOBALFOUNDRIES SG PTE LTD6 citations84
US9673388B2Jun 6, 2017
Integrated circuit structures with spin torque transfer magnetic random access memory and methods for fabricating the same
GLOBALFOUNDRIES SG PTE LTD16 citations84
US10163979B2Dec 25, 2018
Selector-resistive random access memory cell
GLOBALFOUNDRIES SG PTE LTD4 citations73
US9728721B2Aug 8, 2017
Resistive memory device
GLOBALFOUNDRIES SG PTE LTD2 citations73
US9647035B2May 9, 2017
Non-volatile resistive random access memory crossbar devices with maximized memory element density and methods of forming the same
GLOBALFOUNDRIES SG PTE LTD4 citations73
US9484530B2Nov 1, 2016
Integrated circuit structures with spin torque transfer magnetic random access memory having increased memory cell density and methods for fabricating the same
GLOBALFOUNDRIES SG PTE LTD6 citations73
US9263665B1Feb 16, 2016
Two-bits per cell structure with spin torque transfer magnetic random access memory and methods for fabricating the same
GLOBALFOUNDRIES SG PTE LTD2 citations63
US10186554B2Jan 22, 2019
Vertical random access memory with selectors
GLOBALFOUNDRIES SG PTE LTD1 citations62
US10804323B2Oct 13, 2020
Selector-resistive random access memory cell
GLOBALFOUNDRIES SG PTE LTD0 citations52
US10651238B2May 12, 2020
High density multi-time programmable resistive memory devices and method of forming thereof
GLOBALFOUNDRIES SG PTE LTD0 citations52
US10333065B2Jun 25, 2019
Resistive memory device
GLOBALFOUNDRIES SG PTE LTD0 citations52
US9397146B2Jul 19, 2016
Vertical random access memory with selectors
GLOBALFOUNDRIES SG PTE LTD0 citations52
GLOBALFOUNDRIES US INC
4 patentsUS11515205B2Nov 29, 2022
Conductive structures for contacting a top electrode of an embedded memory device and methods of making such contact structures on an IC product
GLOBALFOUNDRIES US INC5 citations71
US12453102B2Oct 21, 2025
Vertical memory devices
GLOBALFOUNDRIES US INC0 citations59
US11367750B2Jun 21, 2022
Vertical memory devices
GLOBALFOUNDRIES US INC0 citations59
US11094585B2Aug 17, 2021
Methods of forming a conductive contact structure to a top electrode of an embedded memory device on an IC product and a corresponding IC product
GLOBALFOUNDRIES US INC0 citations48
MICRON TECHNOLOGY INC
4 patentsUS11355209B2Jun 7, 2022
Accessing a multi-level memory cell
MICRON TECHNOLOGY INC3 citations70
US11568952B2Jan 31, 2023
Adjustable programming pulses for a multi-level cell
MICRON TECHNOLOGY INC0 citations62
US11694747B2Jul 4, 2023
Self-selecting memory cells configured to store more than one bit per memory cell
MICRON TECHNOLOGY INC1 citations61
US11894078B2Feb 6, 2024
Accessing a multi-level memory cell
MICRON TECHNOLOGY INC0 citations60
GLOBALFOUNDRIES INC
2 patentsUS10461173B1Oct 29, 2019
Methods, apparatus, and manufacturing system for forming source and drain regions in a vertical field effect transistor
GLOBALFOUNDRIES INC7 citations82
US10886287B2Jan 5, 2021
Multiple-time programmable (MTP) memory device with a wrap-around control gate
GLOBALFOUNDRIES INC1 citations62