P

Inventor

KOBAYASHI IPPEI

JP31 patents
⚠️ This page may combine multiple inventors who share the name “KOBAYASHI IPPEI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SEMICONDUCTOR ENERGY LAB

21 patents
US4986213AJan 22, 1991

Semiconductor manufacturing device

SEMICONDUCTOR ENERGY LAB121 citations99
US4888305ADec 19, 1989

Method for photo annealing non-single crystalline semiconductor films

SEMICONDUCTOR ENERGY LAB131 citations99
US5952676ASep 14, 1999

Liquid crystal device and method for manufacturing same with spacers formed by photolithography

SEMICONDUCTOR ENERGY LAB366 citations98
US5379139AJan 3, 1995

Liquid crystal device and method for manufacturing same with spacers formed by photolithography

SEMICONDUCTOR ENERGY LAB477 citations98
US5296405AMar 22, 1994

Method for photo annealing non-single crystalline semiconductor films

SEMICONDUCTOR ENERGY LAB100 citations96
US4978203ADec 18, 1990

Liquid crystal device with an apparent hysteresis

SEMICONDUCTOR ENERGY LAB61 citations96
US4806496AFeb 21, 1989

Method for manufacturing photoelectric conversion devices

SEMICONDUCTOR ENERGY LAB93 citations96
US5963288AOct 5, 1999

Liquid crystal device having sealant and spacers made from the same material

SEMICONDUCTOR ENERGY LAB42 citations95
US4874461AOct 17, 1989

Method for manufacturing liquid crystal device with spacers formed by photolithography

SEMICONDUCTOR ENERGY LAB112 citations95
US6493057B1Dec 10, 2002

Liquid crystal device and method for manufacturing same with spacers formed by photolithography

SEMICONDUCTOR ENERGY LAB14 citations92
US5171710ADec 15, 1992

Method for photo annealing non-single crystalline semiconductor films

SEMICONDUCTOR ENERGY LAB41 citations92
US5089426AFeb 18, 1992

Method for manufacturing a semiconductor device free from electrical shortage due to pin-hole formation

SEMICONDUCTOR ENERGY LAB41 citations92
US4786607ANov 22, 1988

Method for manufacturing a semiconductor device free from current leakage through a semiconductor layer

SEMICONDUCTOR ENERGY LAB40 citations92
US4725558AFeb 16, 1988

Semiconductor defects curing method and apparatus

SEMICONDUCTOR ENERGY LAB49 citations92
US4937651AJun 26, 1990

Semiconductor device free from the current leakage through a semiconductor layer and method for manufacturing same

SEMICONDUCTOR ENERGY LAB20 citations82
US5035488AJul 30, 1991

Method of manufacturing liquid crystal devices having semiconductor switching elements

SEMICONDUCTOR ENERGY LAB12 citations74
US4904057AFeb 27, 1990

Liquid crystal device with a smectic chiral liquid crystal and with a rectifier in series with each pixel

SEMICONDUCTOR ENERGY LAB6 citations74
US4812415AMar 14, 1989

Method for making semiconductor device free from electrical short circuits through a semiconductor layer

SEMICONDUCTOR ENERGY LAB15 citations74
US5029983AJul 9, 1991

Liquid crystal device with a smectic chiral liquid crystal

SEMICONDUCTOR ENERGY LAB2 citations63
US4995706AFeb 26, 1991

Liquid crystal device with a ferroelectric thin film

SEMICONDUCTOR ENERGY LAB6 citations63
US6853431B2Feb 8, 2005

Liquid crystal device and method for manufacturing same with spacers formed by photolithography

SEMICONDUCTOR ENERGY LAB0 citations51

TOYOTA MOTOR CO LTD

5 patents

NEC CORP

4 patents

DAINIPPON SCREEN MFG

1 patent